Invention Grant
- Patent Title: Extreme ultraviolet (EUV) exposure system and method of manufacturing semiconductor device using the same
-
Application No.: US15464951Application Date: 2017-03-21
-
Publication No.: US09996009B2Publication Date: 2018-06-12
- Inventor: Chang-min Park , Myung-soo Hwang , Ji-sun Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2016-0095487 20160727
- Main IPC: G03B27/54
- IPC: G03B27/54 ; G03B27/72 ; G03F7/20

Abstract:
An extreme ultraviolet (EUV) exposure system capable of improving the yield of an EUV exposure process by improving EUV exposure performance, and furthermore, capable of increasing throughput or productivity of the EUV exposure process, the EUV exposure system including an EUV exposure apparatus configured to perform EUV exposure on a wafer disposed on a chuck table, a load-lock chamber combined with the EUV exposure apparatus and configured to supply and discharge the wafer to/from the EUV exposure apparatus, and an ultraviolet (UV) exposure apparatus configured to perform UV exposure by irradiating an entire upper surface of the wafer with a UV light without using a mask.
Public/Granted literature
Information query