Invention Grant
- Patent Title: Data storage device and flash memory voltage protection method thereof
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Application No.: US15809542Application Date: 2017-11-10
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Publication No.: US09997249B2Publication Date: 2018-06-12
- Inventor: Yi-Hua Pao
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Jhubei
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei
- Agency: Wang Law Firm, Inc.
- Priority: TW102148612A 20131227
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/22

Abstract:
A data storage device includes a flash memory, a voltage detection device, and a controller. The flash memory is arranged to store data. The voltage detection device is arranged to detect a supply voltage received by the data storage device. The controller is configured to receive write commands from a host, and perform a prohibition mode when the supply voltage is outside a predetermined range, wherein the write command is arranged to enable the controller to write the flash memory, and the controller is further configured to disable all of the write commands received from the host in the prohibition mode.
Public/Granted literature
- US20180090211A1 Data Storage Device and Voltage Protection Method Thereof Public/Granted day:2018-03-29
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