公开(公告)号：US20240170036A1

公开(公告)日：2024-05-23

申请号：US18389227

申请日：2023-11-14

Applicant: Silicon Motion, Inc.

Inventor： Jieh-Hsin Chien ,  Yi-Hua Pao

IPC: G11C11/406 ,  G11C11/4074

CPC classification number: G11C11/40615 ,  G11C11/4074

Abstract: A data protection method applied to a data storage device including a volatile memory and a non-volatile flash memory is provided. The data protection method includes, executing a protection program after the data storage device is coupled to a host, to perform following steps: shielding a refresh command from the host; monitoring a working voltage of the data storage device through a voltage sensing module; determining whether the working voltage is lower than a threshold; when it is determined that the working voltage is lower than the threshold, providing the data storage device with power to trigger the refresh command to write the data in the volatile memory into the non-volatile flash memory. Therefore, the writing times of the data storage device are reduced, the performance degradation of the data storage device is avoided, and the service life of the data storage device is extended.

公开(公告)号：US20190146687A1

公开(公告)日：2019-05-16

申请号：US16039342

申请日：2018-07-19

Applicant: Silicon Motion Inc.

Inventor： Jieh-Hsin Chien ,  Yi-Hua Pao

IPC: G06F3/06

Abstract: A method for performing refresh management in a memory device, the memory device and controller thereof are provided. The method may include: monitoring a temperature of the memory device, wherein the temperature is detected through a temperature sensor; updating a recorded highest temperature and a recorded lowest temperature according to said temperature; checking whether a difference between the recorded highest temperature and the recorded lowest temperature is greater than a predetermined temperature threshold; and when the difference is greater than the predetermined temperature threshold, triggering refresh of the memory device.

公开(公告)号：US10915388B2

公开(公告)日：2021-02-09

申请号：US15868190

申请日：2018-01-11

Applicant: Silicon Motion, Inc.

Inventor： Yi-Hua Pao ,  Wen-Chi Hu

IPC: G06F11/00 ,  G06F11/07 ,  G06F11/10 ,  G11C29/52 ,  G11C29/44

Abstract: The data storage device includes a first memory having error correction capability, and a controller coupled to the first memory. The controller is configured to calculate an error count of the first memory. The controller is configured to report a message to a host when the controller determines that an alarm condition is satisfied. The alarm condition is related to the error count of the first memory and a threshold count.

公开(公告)号：US09990999B2

公开(公告)日：2018-06-05

申请号：US15809539

申请日：2017-11-10

Applicant: Silicon Motion, Inc.

Inventor： Yi-Hua Pao

IPC: G11C16/06 ,  G11C16/22

CPC classification number: G11C16/225

Abstract: A data storage device includes a flash memory, a voltage detection device, and a controller. The flash memory is arranged to store data. The voltage detection device is arranged to detect a supply voltage received by the data storage device. The controller is configured to receive write commands from a host, and perform a prohibition mode when the supply voltage is outside a predetermined range, wherein the write command is arranged to enable the controller to write the flash memory, and the controller is further configured to disable all of the write commands received from the host in the prohibition mode.

公开(公告)号：US20180090211A1

公开(公告)日：2018-03-29

申请号：US15809542

申请日：2017-11-10

Applicant: Silicon Motion, Inc.

Inventor： Yi-Hua Pao

IPC: G11C16/22

CPC classification number: G11C16/225

Abstract: A data storage device includes a flash memory, a voltage detection device, and a controller. The flash memory is arranged to store data. The voltage detection device is arranged to detect a supply voltage received by the data storage device. The controller is configured to receive write commands from a host, and perform a prohibition mode when the supply voltage is outside a predetermined range, wherein the write command is arranged to enable the controller to write the flash memory, and the controller is further configured to disable all of the write commands received from the host in the prohibition mode.

公开(公告)号：US11803330B2

公开(公告)日：2023-10-31

申请号：US17511805

申请日：2021-10-27

Applicant: Silicon Motion, Inc.

Inventor： Jieh-Hsin Chien ,  Yi-Hua Pao

IPC: G06F3/06 ,  G06F1/30

CPC classification number: G06F3/0659 ,  G06F1/30 ,  G06F3/064 ,  G06F3/0619 ,  G06F3/0653 ,  G06F3/0679

Abstract: The invention introduces a method for handling sudden power off recovery, performed by a processing unit of an electronic apparatus, to include: driving a flash interface to program data sent by a host into pseudo single-level cell (pSLC) blocks of multiple logical unit numbers (LUNs) in a single-level cell (SLC) mode with multiple channels after detecting that the electronic apparatus has suffered a sudden power off (SPO), and driving the flash interface to erase memory cells of all the pSLC blocks when data of all pSLC blocks has been read by the host. The pSLC blocks are reserved from being written to in regular operations until the SPO is detected.

公开(公告)号：US10990497B2

公开(公告)日：2021-04-27

申请号：US17003528

申请日：2020-08-26

Applicant: Silicon Motion, Inc.

Inventor： Yi-Hua Pao

IPC: G11C7/00 ,  G06F11/30 ,  G11C11/409 ,  G06F12/02 ,  G11C11/4072

Abstract: A data storage device equipped with a plurality of thermometers configured to detect temperature of different regions of a non-volatile memory. A controller of the data storage device is configured to operate the non-volatile memory to heat up a target region of the non-volatile memory according to a regional temperature detected by a target thermometer corresponding to the target region.

公开(公告)号：US20180329827A1

公开(公告)日：2018-11-15

申请号：US15954307

申请日：2018-04-16

Applicant: Silicon Motion, Inc.

Inventor： Jieh-Hsin Chien ,  Yi-Hua Pao

IPC: G06F12/1009

CPC classification number: G06F12/1009 ,  G06F2212/1021 ,  G06F2212/1024 ,  G06F2212/2022 ,  G06F2212/657 ,  G06F2212/7201

Abstract: A storage device includes a flash memory array and a controller. The flash memory array stores a plurality of user data. After the controller finishes initialization, the controller accesses the user data stored in the flash memory array according to a plurality of host commands and an H2F mapping table, and records a plurality of address information about the user data in a powered-ON access table.

公开(公告)号：US11188267B2

公开(公告)日：2021-11-30

申请号：US16865516

申请日：2020-05-04

Applicant: Silicon Motion, Inc.

Inventor： Jieh-Hsin Chien ,  Yi-Hua Pao

IPC: G06F3/06 ,  G06F1/30

Abstract: The invention introduces a method for handling sudden power off recovery, performed by a processing unit of an electronic apparatus, to include: driving a flash interface to program data sent by a host into pseudo single-level cell (pSLC) blocks of multiple logical unit numbers (LUNs) in a single-level cell (SLC) mode with multiple channels after detecting that the electronic apparatus has suffered a sudden power off (SPO). The pSLC blocks are reserved from being written any data in regular operations until the SPO is detected.

公开(公告)号：US10942653B2

公开(公告)日：2021-03-09

申请号：US16039342

申请日：2018-07-19

Applicant: Silicon Motion Inc.

Inventor： Jieh-Hsin Chien ,  Yi-Hua Pao

IPC: G06F3/06 ,  G11C7/04 ,  G11C16/34

Abstract: A method for performing refresh management in a memory device, the memory device and controller thereof are provided. The method may include: monitoring a temperature of the memory device, wherein the temperature is detected through a temperature sensor; updating a recorded highest temperature and a recorded lowest temperature according to said temperature; checking whether a difference between the recorded highest temperature and the recorded lowest temperature is greater than a predetermined temperature threshold; and when the difference is greater than the predetermined temperature threshold, triggering refresh of the memory device.