再颁专利
- 专利标题: Light emitting device with improved electrode structure to minimize short circuiting
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申请号: US615827申请日: 1990-11-15
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公开(公告)号: USRE34378E公开(公告)日: 1993-09-14
- 发明人: Masaaki Sawai , Masamichi Kobayashi , Shoji Hayashi , Hiroshi Naka , Masahiro Ichiki
- 申请人: Masaaki Sawai , Masamichi Kobayashi , Shoji Hayashi , Hiroshi Naka , Masahiro Ichiki
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX59-49033 19840316; JPX59-72819 19840413
- 主分类号: H01L33/38
- IPC分类号: H01L33/38 ; H01S5/02 ; H01S5/042 ; H01S5/227
摘要:
A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-curcuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.
公开/授权文献
- US5706678A Laundry dresser 公开/授权日:1998-01-13
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