-
公开(公告)号：USRE34378E
公开(公告)日：1993-09-14
申请号：US615827
申请日：1990-11-15
CPC分类号： H01S5/0425 , H01L33/38 , H01S5/0202 , H01S5/227 , H01S5/2275 , H01S5/2277
摘要： A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-curcuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.
-
2.发明授权Light emitting device with improved electrode structure to minimize short circuiting 失效具有改善的电极结构的发光器件以使短路最小化
公开(公告)号：US4692927A
公开(公告)日：1987-09-08
申请号：US712029
申请日：1985-03-15
CPC分类号： H01S5/4031 , H01L24/05 , H01L33/38 , H01S5/0425 , H01S5/32 , H01L2224/04042 , H01L2224/48463 , H01L2924/12036 , H01L2924/12042 , H01L33/385 , H01S5/0202 , H01S5/227 , H01S5/2275 , H01S5/2277
摘要： A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-circuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.
摘要翻译： 公开了一种发光器件，其包括半导体块，以穿透半导体块的相互面对的端面的方式设置的有源层和设置在半导体块的主平面上的电极，其中， 包括沿着有源层设置的第一电极部分和第二电极部分，该第二电极部分一体地连接第一电极部分，并且其周边与半导体块的第二主平面的周边不接触。 导致电流均匀地流过整个有源层，并且稳定地执行发光操作。 由于电极没有设置在半导体块的周围，所以可以减少当晶片被切断以产生激光芯片时或当芯片的角落断裂时可能发生的结短路的发生。
-
3.发明授权Light emitting device with improved electrode structure to minimize short circuiting 失效具有改善的电极结构的发光器件以使短路最小化
公开(公告)号：US4785455A
公开(公告)日：1988-11-15
申请号：US78097
申请日：1987-07-27
CPC分类号： H01S5/4031 , H01L24/05 , H01L33/38 , H01S5/0425 , H01S5/32 , H01L2224/04042 , H01L2224/48463 , H01L2924/12036 , H01L2924/12042 , H01L33/385 , H01S5/0202 , H01S5/227 , H01S5/2275 , H01S5/2277
摘要： A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-curcuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.
摘要翻译： 公开了一种发光器件，其包括半导体块，以穿透半导体块的相互面对的端面的方式设置的有源层和设置在半导体块的主平面上的电极，其中， 包括沿着有源层设置的第一电极部分和第二电极部分，该第二电极部分一体地连接第一电极部分，并且其周边与半导体块的第二主平面的周边不接触。 导致电流均匀地流过整个有源层，并且稳定地进行发光操作。 由于电极没有设置在半导体块的周围，所以可以减少当晶片被切断以产生激光芯片时或当芯片的角落断开时可能发生的结短路。
-
公开(公告)号：US4367483A
公开(公告)日：1983-01-04
申请号：US192991
申请日：1980-10-02
申请人： Takeo Takahashi , Kazuhiro Kurata , Yuichi Ono , Kazuhiro Ito , Makoto Morioka , Mitsuhiro Mori , Ginro Takemura , Makoto Sakamoto , Masahiro Ichiki , Youichi Yasuda , Hirobumi Ouchi
发明人： Takeo Takahashi , Kazuhiro Kurata , Yuichi Ono , Kazuhiro Ito , Makoto Morioka , Mitsuhiro Mori , Ginro Takemura , Makoto Sakamoto , Masahiro Ichiki , Youichi Yasuda , Hirobumi Ouchi
CPC分类号： H04B10/40 , G02B6/4246 , H01L25/167 , H01L31/12 , H01L2924/0002
摘要： An optical semiconductor device includes a light emitting element disposed on a silicon sub-mount having a light receiving element formed in a surface region. By virtue of integral arrangement of the light emitting element and the light receiving element, a single lens can be used for both optical transmission and optical reception, whereby an optical communication system can be manufactured very inexpensively. Further, transmission and reception can be carried out simultaneously.
摘要翻译： 光学半导体器件包括设置在具有形成在表面区域中的光接收元件的硅子座上的发光元件。 通过发光元件和光接收元件的整体布置，可以将单个透镜用于光传输和光接收两者，从而可以非常便宜地制造光通信系统。 此外，可以同时进行发送和接收。
-
-
-
搜索结果
4 条记录 (耗时 0.022 秒)
