再颁专利
- 专利标题: Vacuum treatment apparatus and a method for manufacturing semiconductor device therein
- 专利标题(中): 真空处理装置及其制造方法
-
申请号: US88377申请日: 1998-06-02
-
公开(公告)号: USRE36925E公开(公告)日: 2000-10-31
- 发明人: Takayuki Ohba , Toshiya Suzuki , Seishi Murakami
- 申请人: Takayuki Ohba , Toshiya Suzuki , Seishi Murakami
- 申请人地址: JPX
- 专利权人: Tokyo Electron Kabushiki Kaisha
- 当前专利权人: Tokyo Electron Kabushiki Kaisha
- 当前专利权人地址: JPX
- 优先权: JPX5-220680 19930811
- 主分类号: H01L21/205
- IPC分类号: H01L21/205 ; C23C16/44 ; H01L21/00 ; H01L21/285 ; H01L21/304 ; H01L21/31 ; B08B3/10
摘要:
When an object of treatment is subjected to, for example, a gas treatment in an airtight chamber, reaction products adhere to the inner wall surface of the chamber, an object holder therein, and the corner portions of the chamber. When a cleaning medium is injected into the chamber, according to the present invention, the reaction products are dissolved in the cleaning medium by hydrolysis. Thereafter, the cleaning medium is discharged from the chamber. Then, the chamber is heated and evacuated, so that water vapor is discharged to provide a predetermined degree of vacuum, whereupon the treatment can be started anew. Therefore, a wiping operation can be omitted. Moreover, the reaction products remaining at the corner portions of the chamber can be removed without forming a source of polluted particles, so that the necessity of overhauling can be obviated. Thus, fully automatic cleaning, so to speak, can be effected, and the chamber need not be open to the atmosphere, so that the throughput can be improved.
公开/授权文献
- USD415576S Revetment block 公开/授权日:1999-10-19
信息查询
IPC分类: