公开(公告)号：US5777300A

公开(公告)日：1998-07-07

申请号：US341052

申请日：1994-11-16

Applicant: Kenji Homma ,  Koichi Yomiya

Inventor： Kenji Homma ,  Koichi Yomiya

IPC: C30B33/00 ,  H01L21/00 ,  H05B6/80 ,  H01L21/31

CPC classification number: H01L21/67115 ,  C30B33/005

Abstract: The present invention comprises a processing furnace for oxidizing object to be processed at a high temperature, pressure reducing means for evacuating the interior of the processing furnace, a burning apparatus disposed outside the processing furnace for burning hydrogen gas and oxygen gas to generate water vapor, a water vapor supply pipe interconnecting the burning apparatus and to the processing furnace, and a throttle disposed on the water vapor supply pipe for generating a pressure difference in the water vapor supply pipe between a side of the burning apparatus and a side of the processing furnace. Stable burning is ensured in the burning apparatus, which makes set oxidation under low pressures possible. It is possible that in place of the throttle, atomization means for atomizing pure water, or a boiling water vapor generating unit, or a microwave water vapor generating unit.

Abstract translation: 本发明包括一种用于在高温下氧化待处理物体的加工炉，用于抽空处理炉内部的减压装置，设置在处理炉外部用于燃烧氢气和氧气以产生水蒸气的燃烧装置， 将燃烧装置和处理炉相互连接的水蒸气供给管，以及设置在水蒸气供给管上的节流阀，用于在燃烧装置的一侧和处理炉的一侧之间产生水蒸气供给管的压力差 。 在燃烧装置中确保稳定的燃烧，这使得在低压下凝固氧化成为可能。 可以代替节气门，雾化纯水或沸水蒸汽发生单元或微波水蒸汽发生单元的雾化装置。

公开(公告)号：US5690998A

公开(公告)日：1997-11-25

申请号：US622854

申请日：1996-03-29

Applicant: Yasushi Nagasawa ,  Satoru Yamashita ,  Masahiko Matsudo

Inventor： Yasushi Nagasawa ,  Satoru Yamashita ,  Masahiko Matsudo

IPC: G01R1/067 ,  G01R1/073 ,  G01R3/00 ,  B05D1/32 ,  B05D1/36

CPC classification number: G01R1/07357 ,  G01R1/06711 ,  G01R1/06761 ,  G01R1/06772 ,  G01R3/00 ,  G01R1/0675 ,  Y10T137/5762

Abstract: The present invention relates to a probe needle wherein a conductive film is formed over a first insulating film formed around the outer periphery of a rod-like member through which a signal current flows, a second insulating film is formed over the outer periphery of the conductive film, and the conductive film is grounded. Since the rod-like member through which a signal current flows is thereby shielded, it is not affected by noise, and mutual crosstalk between signal currents is also prevented. Moreover, since ill effects caused by mutual contact with other probe needles is prevented by the second insulating film, reliable and stable measurement is possible. The coating of the probe needle is implemented by covering non-coating portions of the probe needle by a melted thermally liquefiable wax, hardening the thermally liquefiable wax covering the non-coating portions at room temperature, applying a coating to the probe needle by vacuum deposition, heating the thermally liquefiable wax once again, and then removing the thermally liquefiable wax from the probe needle. As a result, a probe needle is obtained wherein a non-coating portion is reliably delimited from a coating portion by a masking boundary. When the coating process is completed, the probe needle could be subjected to washing to completely remove any remaining wax.

Abstract translation: 本发明涉及一种探针，其中导电膜形成在围绕信号电流流动的杆状构件的外周围形成的第一绝缘膜上，第二绝缘膜形成在导电的外周上 膜，导电膜接地。 由于信号电流流过的杆状构件被屏蔽，所以不受噪声的影响，并且也防止了信号电流之间的相互串扰。 此外，由于通过第二绝缘膜防止与其他探针的相互接触引起的不良影响，因此可靠且稳定的测量是可能的。 探针的涂层通过用熔融的可热化的液体蜡覆盖探针的未涂覆部分来实现，在室温下固化覆盖非涂覆部分的热可液化蜡，通过真空沉积将涂层施加到探针上 再次加热可热化的蜡，然后从探针取出热可液化的蜡。 结果，获得探针，其中非涂覆部分通过掩蔽边界与涂布部分可靠地界定。 当涂布过程完成时，可以对探针进行洗涤以完全除去任何剩余的蜡。

公开(公告)号：US5622639A

公开(公告)日：1997-04-22

申请号：US280855

申请日：1994-07-26

Applicant: Hirofumi Kitayama ,  Toshimitu Shibata ,  Toshiaki Miyaju ,  Katsushin Miyagi

Inventor： Hirofumi Kitayama ,  Toshimitu Shibata ,  Toshiaki Miyaju ,  Katsushin Miyagi

IPC: C23C16/46 ,  C30B31/12 ,  F27B5/14

CPC classification number: C30B31/12 ,  C23C16/46

Abstract: A heat treating apparatus for mounting objects to be treated on an object-to-be-treated boat (wafer boat) provided on a heat insulating cylinder, and loading the object-to-be-treated boat into a processing vessel for a heat treatment, a temperature detecting sensor is provided in a film depositing area of a relatively large heat capacity, which is a lower part of a gap defined between an inner tube of the processing vessel and an outer tube thereof so as to detect temperatures of those of the objects to be treated located there and control temperatures of the heating unit. Thus heat response is improved, and temperatures of the objects to be treated can be accurately detected.

Abstract translation: 一种用于将被处理物体安装在设置在隔热圆筒上的被处理船舶（晶片舟皿）上并将待处理船舶装载到热处理处理容器中的热处理装置 温度检测传感器设置在比较大的热容量的薄膜沉积区域中，该薄膜沉积区域是在处理容器的内管和外管之间限定的间隙的下部，以便检测其中的温度 要处理的物体位于那里，并控制加热单元的温度。 因此，热响应得到改善，并且可以准确地检测被处理物体的温度。

公开(公告)号：US5559446A

公开(公告)日：1996-09-24

申请号：US276847

申请日：1994-07-18

Applicant: Kunio Sano

Inventor： Kunio Sano

IPC: G01R1/073 ,  G01R31/02

CPC classification number: G01R1/0735 ,  Y10T29/4913

Abstract: A probing device for inspecting semiconductor devices such as IC chips includes a mounting section for supporting a silicon substrate wafer (i.e., an object to be inspected), a moving section for moving a probe card in such a way that contacts formed on a surface of the probe card can be pushed against electrode pads formed on the wafer, and a measuring section. The probe card is formed by joining a silicon nitride (Si.sub.3 N.sub.4) thin film (whose thermal expansion coefficient is roughly equal to that of the silicon wafer) to a lower surface of a wiring substrate. The wiring substrate is composed of a polyamide thin film (as an insulating layer) and conductive layers (as conductive signal line paths) formed in and on both the surfaces of the polyamide thin film. Further, bumps (contacts) are arranged on the lower surface of the silicon nitride thin film. A plurality of through holes are formed penetrating from the upper surface of the wiring substrate to the lower surface of the silicon nitride film at an area outside the bump arrangement region. These through holes mechanically connect the silicon nitride thin film to the wiring substrate and further electrically connect the bumps to the circumferential portion of the probe card body via the conductive layers. Since the thermal expansion coefficient of the silicon wafer is roughly equal to that of the silicon nitride thin film of the probe card, even when the silicon wafer is heated or cooled for electrical measurements, it is possible to securely keep contact between the contacts (bumps) of the probe card and the electrode pads formed on the IC chips of the wafer without dislocation.

Abstract translation: 用于检查诸如IC芯片的半导体器件的探测装置包括用于支撑硅衬底晶片（即，待检查对象）的安装部分，用于移动探针卡的移动部分，使得形成在表面上的触点 可以将探针卡推压到形成在晶片上的电极焊盘和测量部分。 探针卡通过将布线基板的下表面的氮化硅（Si 3 N 4）薄膜（其热膨胀系数与硅晶片的热膨胀系数大致相等）而形成。 布线基板由聚酰胺薄膜（绝缘层）和形成在聚酰胺薄膜的两个表面上的导电层（作为导电信号线路径）构成。 此外，在氮化硅薄膜的下表面上设置凸块（触点）。 多个通孔从布线基板的上表面穿过凸起布置区域外侧的区域形成到氮化硅膜的下表面。 这些通孔将氮化硅薄膜机械地连接到布线基板，并且通过导电层进一步将凸块电连接到探针卡体的圆周部分。 由于硅晶片的热膨胀系数与探针卡的氮化硅薄膜的热膨胀系数大致相同，所以即使将硅晶片加热或冷却进行电气测量，也可以牢固地保持触点之间的接触 ）和形成在晶片的IC芯片上的电极焊盘，而不脱位。

公开(公告)号：US5520142A

公开(公告)日：1996-05-28

申请号：US409427

申请日：1995-03-24

Applicant: Towl Ikeda ,  Katsumi Ishii ,  Yoji Iizuka

Inventor： Towl Ikeda ,  Katsumi Ishii ,  Yoji Iizuka

IPC: B01J3/03 ,  C23C14/00 ,  C23C14/56 ,  C23C16/44 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC classification number: H01L21/67017 ,  B01J3/03 ,  C23C14/564 ,  C23C16/4401

Abstract: A gap is defined between an inner region of an end face of a first container member of a container and an inner region of an abutting portion of a second container member, the inner regions being situated inside a seal member. The respective inner regions of the end face of the first container member and the abutting portion of the second container member, which are situated inside the seal member, are prevented from coming into contact with each other when the interior of the container is decompressed. Even though the second container member is bent inward by atmospheric pressure when the container is decompressed to a predetermined degree of vacuum, therefore, the abutting portion thereof cannot come into contact with the inner edge of the end face of the first container member. Thus, if decompression and exposure to atmospheric pressure are repeated to bend the container member repeatedly, there is no possibility of the inner edge portion of the end face of the first container member being separated or rubbed off to produce dust.

Abstract translation: 在容器的第一容器构件的端面的内部区域和第二容器构件的抵接部的内部区域之间限定有间隙，内部区域位于密封构件的内部。 当容器内部减压时，防止位于密封构件内部的第一容器构件的端面的各个内部区域和第二容器构件的抵接部分彼此接触。 因此，即使当容器减压至预定的真空度时第二容器构件向内弯曲，因此其抵接部分不能与第一容器构件的端面的内边缘接触。 因此，如果重复减压和暴露于大气压力以反复地使容器构件弯曲，则不会使第一容器构件的端面的内边缘部分分离或摩擦而产生灰尘。

公开(公告)号：USD365584S

公开(公告)日：1995-12-26

申请号：US24005

申请日：1994-06-06

Applicant: Tatsuya Nakagome ,  Takashi Tozawa

Designer： Tatsuya Nakagome ,  Takashi Tozawa

公开(公告)号：US5458685A

公开(公告)日：1995-10-17

申请号：US104651

申请日：1993-08-11

Applicant: Kazuhide Hasebe ,  Nobuaki Takahashi ,  Keiji Sukekawa

Inventor： Kazuhide Hasebe ,  Nobuaki Takahashi ,  Keiji Sukekawa

IPC: C23C16/44 ,  H01L21/00 ,  C23C16/00

CPC classification number: H01L21/67109 ,  C23C16/4401 ,  C23C16/4412

Abstract: The present invention relates to a heat treatment apparatus wherein treatment objects such as semiconductor wafers contained in a treatment boat are loaded in a treatment container such as a process tube. Water vapor is supplied from the top of the treatment container toward the bottom for heat treatment of the treatment objects to permit water vapor passage between the treatment container top and the top face of the heat treatment boat. A gas diffusion plate possessing for example 16 flow holes is provided, moreover, a heat treatment space is formed at the bottom direction of the gas diffusion plate. These flow holes are arranged at equal intervals in the circumference direction of a space between the outer circumference of the treatment objects held by the heat treatment boat and the inner side of the treatment container. As a result of this type of construction, the supplied treatment gas (water vapor) can quickly and completely cover all of a plurality of treatment objects contained horizontally at equal spacing in the vertical direction of the heat treatment apparatus to enable uniform heat treatment.

Abstract translation: 本发明涉及一种热处理装置，其中包含在处理舟皿中的诸如半导体晶片的处理物体被装载在诸如处理管的处理容器中。 从处理容器的顶部向底部供给水蒸汽，以对处理对象进行热处理，以允许处理容器顶部和热处理舟皿的顶面之间的水蒸气通过。 另外，提供了具有例如16个流动孔的气体扩散板，并且在气体扩散板的底部方向上形成热处理空间。 这些流动孔在由热处理舟保持的处理对象的外周与处理容器的内侧之间的空间的圆周方向上以相等的间隔配置。 作为这种结构的结果，所供给的处理气体（水蒸汽）可以快速且完全地覆盖热处理设备的垂直方向上以等间隔水平地包含的所有多个处理对象，以实现均匀的热处理。

公开(公告)号：US5427625A

公开(公告)日：1995-06-27

申请号：US163799

申请日：1993-12-09

Applicant: Wataru Okase ,  Masaaki Hasei

Inventor： Wataru Okase ,  Masaaki Hasei

IPC: C23C16/44 ,  B08B5/04

CPC classification number: C23C16/4408 ,  C23C16/4401 ,  C23C16/4412

Abstract: While the interior of a reaction vessel is being deaerated by a first vacuum pump, an inert gas is supplied from an upstream side (reaction gas bottle side) of a flow rate control unit (MFC) to a reaction gas supply pipe. Thus, a reaction gas is substituted with the inert gas. A passageway downstream of the MFC is closed and the interior of the pipe is deaerated from the upstream side through a bypass pipe so that a predetermined degree of vacuum is obtained. Thus, the gas substituting efficiency can be improved. The interior of the reaction vessel and the interior of the reaction gas supply pipe are quickly deaerated without an influence of resistance of the MFC. The inert gas substitution process and the deaerating process are repeated for 10 cycles or more.

Abstract translation: 当反应容器的内部被第一真空泵脱气时，从流量控制单元（MFC）的上游侧（反应气瓶侧）向反应气体供给管供给惰性气体。 因此，反应气体被惰性气体代替。 MFC下游的通道封闭，并且管道内部从上游侧通过旁通管脱气，从而获得预定的真空度。 因此，可以提高气体替代效率。 反应容器的内部和反应气体供给管的内部不受MFC的电阻的影响而快速脱气。 惰性气体置换过程和脱气过程重复10个循环或更多次。

公开(公告)号：US5374888A

公开(公告)日：1994-12-20

申请号：US937790

申请日：1992-09-02

Applicant: Wataru Karasawa

Inventor： Wataru Karasawa

IPC: G01R31/26 ,  G01R1/073 ,  H01L21/66 ,  G01R1/04

CPC classification number: G01R1/07314 ,  Y10S414/141

Abstract: A method for positioning and testing an object to be tested wherein the surface of an object to be tested for electrical characteristics is brought into contact with a test probe. The side of the object opposite the surface to be tested is held by a suction device on the end of one of many arms which are attached to a rotating shaft. The object is then transported to a position to bring it into contact with the test probe where testing is performed to determine whether or not the object is faulty. If necessary, the arms are manipulated in an up and down and an in and out direction with respect to the shaft, and the suction device rotated, to maintain the object to be tested in a proper orientation.

Abstract translation: 一种用于定位和测试待测试物体的方法，其中要测试的电气特性的物体的表面与测试探针接触。 与被测试表面相对的物体的侧面由连接到旋转轴的许多臂之一的端部上的抽吸装置保持。 然后将物体运送到一个位置，使其与测试探针接触，测试被执行以确定物体是否有故障。 如果需要，臂相对于轴在上下方向上被操纵，并且抽吸装置旋转，以使待测物体保持正确的方位。

公开(公告)号：US5362229A

公开(公告)日：1994-11-08

申请号：US79386

申请日：1993-06-21

Applicant: Kenichi Yamaga

Inventor： Kenichi Yamaga

IPC: H01L21/31 ,  F16L27/04 ,  F16L27/06 ,  F16L49/00 ,  F27D7/02 ,  H01L21/22 ,  F27B9/04

CPC classification number: F27D7/02 ,  F16L27/04 ,  F27D2007/023

Abstract: In a semiconductor wafer heat-treating apparatus, there is provided a piping connection device on a gas inlet pipe leading to the heat-treating apparatus and a gas outlet pipe derived from the heat-treating apparatus. The piping connection device has a spherical convex connecting element, and a concave connecting element having a concave spherical surface into which the spherical element is snugly fitted. A pair of presser plates are placed on the outer surfaces of the two connecting elements and clamped by bolts so as to press confronting sealing surfaces of the convex and concave connecting elements against each other. Because the outer surfaces of the two connecting elements to be engaged with the pair of presser plates are spherically fashioned, the connection surfaces can present a satisfactory sealing condition without subjecting the pair of the pipes connected by the piping connection device to excessive biasing forces even though the two pipes are angled to each other.

Abstract translation: 在半导体晶片热处理装置中，在通向热处理装置的气体导入管和从该热处理装置得到的气体出口管上设置配管连接装置。 管道连接装置具有球形凸形连接元件和具有凹形球形表面的凹形连接元件，球形元件紧密配合到该凹形连接元件中。 一对压板放置在两个连接元件的外表面上，并被螺栓夹紧，以将相互凸起的和凹形的连接元件的相对的密封表面压在一起。 由于与一对压板接合的两个连接元件的外表面是球形的，所以连接表面可以呈现令人满意的密封条件，而不会使由配管连接装置连接的一对管子经受过大的偏压力，即使 两个管道彼此成角度。