再颁专利
- 专利标题： Semiconductor device having multi-layered wiring
- 专利标题（中）： 具有多层布线的半导体器件
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申请号： US12198680申请日： 2008-08-26
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公开(公告)号： USRE41948E1公开(公告)日： 2010-11-23
- 发明人: Noriaki Matsunaga
- 申请人： Noriaki Matsunaga
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2001-157195 20010525
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor device is provided with a first insulating film, a first wiring layer formed in the first insulating film, a second insulating film formed above the first wiring layer and the first insulating film, the second insulating film including a low dielectric constant film, a second wiring layer formed in the second insulating film and coupled to the first wiring layer through a first connection section, and a third insulating film formed above the second wiring layer and the second insulating film and serving as one of an interlayer insulating film and a passivation film, and at least one of the first and third insulating films being one of a film formed mainly of SiON, a film formed mainly of SiN, and a laminated film being the films formed mainly of SiON or SiN respectively.
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