再颁专利
USRE43215E1 ESD protection design with turn-on restraining method and structures
有权
ESD保护设计，具有开启约束方式和结构
- 专利标题： ESD protection design with turn-on restraining method and structures
- 专利标题（中）： ESD保护设计，具有开启约束方式和结构
-
申请号： US11598154申请日： 2006-11-09
-
公开(公告)号： USRE43215E1公开(公告)日： 2012-02-28
- 发明人: Ming-Dou Ker , Jeng-Jie Peng , Hsin-Chin Jiang
- 申请人： Ming-Dou Ker , Jeng-Jie Peng , Hsin-Chin Jiang
- 主分类号： H01L23/62
- IPC分类号： H01L23/62
摘要：
The present invention is directed to an electrostatic discharge (ESD) device with an improved ESD robustness for protecting output buffers in I/O cell libraries. The ESD device according to the present invention uses a novel I/O cell layout structure for implementing a turn-on restrained method that reduces the turn-on speed of an ESD guarded MOS transistor by adding a pick-up diffusion region and/or varying channel lengths in the layout structure.
信息查询
IPC分类:
