再颁专利
- 专利标题: Post passivation metal scheme for high-performance integrated circuit devices
- 专利标题(中): 后钝化金属方案用于高性能集成电路器件
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申请号: US11518595申请日: 2006-09-08
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公开(公告)号: USRE43674E1公开(公告)日: 2012-09-18
- 发明人: Mou-Shiung Lin , Jin-Yuan Lee , Ming-Ta Lei , Ching-Cheng Huang
- 申请人: Mou-Shiung Lin , Jin-Yuan Lee , Ming-Ta Lei , Ching-Cheng Huang
- 申请人地址: TW Hsinchu
- 专利权人: Megica Corporation
- 当前专利权人: Megica Corporation
- 当前专利权人地址: TW Hsinchu
- 代理机构: McDermott Will & Emery LLP
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L23/48
摘要:
A new post-passivation metal interconnect scheme is provided over the surface of a IC device that has been covered with a conventional layer of passivation. The metal scheme of the invention comprises, overlying a conventional layer of passivation, thick and wide metal lines in combination with thick layers of dielectric and bond pads. The interconnect system of the invention can be used for the distribution of power, ground, signal and clock lines from bond pads to circuits of a device that are provided in any location of the IC device without introducing significant power drop. No, or smaller ESD circuits are required due to the low impedance post-passivation interconnection, since any accumulated electrostatic discharge will be evenly distributed across all junction capacitance of the circuits on the chip. The post passivation metal scheme is connected to external circuits through bond pads, solder bonding, TAB bonding and the like. A top layer of the interconnect metal scheme is formed using a composite metal for purposes of wirebonding, the composite metal is created over a bulk conduction metal. A diffusion metal may be applied between the bulk metal and the composite metal, in addition a layer of Under-Barrier-Metal (UBM) may be required underneath the bulk conduction metal.