公开(公告)号：US08901733B2

公开(公告)日：2014-12-02

申请号：US12182145

申请日：2008-07-30

申请人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

发明人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02166 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

摘要翻译： 根据本发明的目的，提供了一种在I / O焊盘的表面上形成金属凸块的新方法。 接触垫设置在电介质层的表面上。 在晶片级半导体器件测试期间用作I / O焊盘的I / O焊盘的铝在使用金属干燥的方法的表面积小于接触焊盘的表面积的情况下被完全或部分去除 蚀刻或湿蚀刻。 接触焊盘可以通过在接触焊盘的平面中产生的互连金属或通过已经沉积接触焊盘的电介质层提供的通孔来访问。 通过在用于保护接触焊盘的钝化层上的聚酰亚胺层的沉积，图案化和蚀刻可以进一步扩展该工艺。

公开(公告)号：US20080284016A1

公开(公告)日：2008-11-20

申请号：US12182145

申请日：2008-07-30

申请人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

发明人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

IPC分类号： H01L23/488

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02166 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

公开(公告)号：US07176137B2

公开(公告)日：2007-02-13

申请号：US10435009

申请日：2003-05-09

申请人： Baw-Ching Perng ,  Yih-Shung Lin ,  Ming-Ta Lei ,  Ai-Sen Liu ,  Chia-Hui Lin ,  Cheng-Chung Lin

发明人： Baw-Ching Perng ,  Yih-Shung Lin ,  Ming-Ta Lei ,  Ai-Sen Liu ,  Chia-Hui Lin ,  Cheng-Chung Lin

IPC分类号： H01L21/302

CPC分类号： H01L29/6656 ,  H01L21/823468

摘要： A method of forming pluralities of gate sidewall spacers each plurality comprising different associated gate sidewall spacer widths including providing a first plurality of gate structures; blanket depositing a first dielectric layer over the first plurality of gate structures; blanket depositing a second dielectric layer over the first dielectric layer; etching back through a thickness of the first and second dielectric layers; blanket depositing a first photoresist layer to cover the first plurality and patterning to selectively expose at least a second plurality of gate structures; isotropically etching the at least a second plurality of gate structures for a predetermined time period to selectively etch away a predetermined portion of the first dielectric layer; and, selectively etching away the second dielectric layer to leave gate structures comprising a plurality of associated sidewall spacer widths.

摘要翻译： 形成多个栅极侧壁间隔物的方法，每个栅极侧壁间隔件包括不同的相关栅极侧壁间隔物宽度，包括提供第一多个栅极结构; 在第一多个栅极结构上覆盖沉积第一介电层; 在第一介电层上铺设第二介电层; 通过第一和第二介电层的厚度回蚀; 覆盖沉积第一光致抗蚀剂层以覆盖第一多个并且图案化以选择性地暴露至少第二多个栅极结构; 对所述至少第二多个栅极结构进行各向同性蚀刻预定的时间段以选择性地蚀刻掉所述第一介电层的预定部分; 并且选择性地蚀刻掉第二介电层以留下包括多个相关联的侧壁间隔物宽度的栅极结构。

公开(公告)号：US06815324B2

公开(公告)日：2004-11-09

申请号：US09783384

申请日：2001-02-15

申请人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

发明人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

IPC分类号： H01L2144

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02166 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

公开(公告)号：US06746900B1

公开(公告)日：2004-06-08

申请号：US10369992

申请日：2003-02-19

申请人： Ai-Sen Liu ,  Baw-Ching Perng ,  Ming-Ta Lei ,  Wen-Kai Wan ,  Cheng-Chung Lin ,  Kuei-Wu Huang ,  Yih-Shung Lin ,  Chia-Hui Lin

发明人： Ai-Sen Liu ,  Baw-Ching Perng ,  Ming-Ta Lei ,  Wen-Kai Wan ,  Cheng-Chung Lin ,  Kuei-Wu Huang ,  Yih-Shung Lin ,  Chia-Hui Lin

IPC分类号： H01L21335

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/66583

摘要： In a method of forming an integrated circuit, a sacrificial layer is formed over a substrate. The sacrificial layer has a gate trench formed therein and a first layer of a first material formed over the substrate in the gate trench. A second layer of a second material is formed over the first layer in the gate trench. The first and second layers are processed to form a layer of a high-K dielectric material.

摘要翻译： 在形成集成电路的方法中，在衬底上形成牺牲层。 牺牲层具有形成在其中的栅极沟槽和形成在栅极沟槽中的衬底上的第一材料的第一层。 第二材料的第二层形成在栅极沟槽中的第一层上。 处理第一层和第二层以形成高K电介质材料层。

公开(公告)号：US09252019B2

公开(公告)日：2016-02-02

申请号：US13222502

申请日：2011-08-31

申请人： Wen-Chi Tsai ,  Chia-Han Lai ,  Yung-Chung Chen ,  Mei-Yun Wang ,  Chii-Ming Wu ,  Fang-Cheng Chen ,  Huang-Ming Chen ,  Ming-Ta Lei

发明人： Wen-Chi Tsai ,  Chia-Han Lai ,  Yung-Chung Chen ,  Mei-Yun Wang ,  Chii-Ming Wu ,  Fang-Cheng Chen ,  Huang-Ming Chen ,  Ming-Ta Lei

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L29/417 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/78 ,  H01L21/02063 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76855 ,  H01L23/485 ,  H01L23/535 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.

摘要翻译： 提供了一种用于形成和使用衬套的系统和方法。 一个实施例包括在衬底之上的层间电介质中形成开口，并沿着开口的侧壁形成衬垫。 衬套的一部分从开口的底部移除，并且可以通过衬套执行清洁过程。 通过使用衬垫，可以减少或消除从清洁过程对开口侧壁的损坏。 另外，衬垫可用于帮助衬底内的离子注入。

公开(公告)号：US08481418B2

公开(公告)日：2013-07-09

申请号：US11930220

申请日：2007-10-31

申请人： Jin-Yuan Lee ,  Ming-Ta Lei ,  Ching-Cheng Huang ,  Chuen-Jye Lin

发明人： Jin-Yuan Lee ,  Ming-Ta Lei ,  Ching-Cheng Huang ,  Chuen-Jye Lin

IPC分类号： H01L21/44

CPC分类号： H04B1/7113 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3128 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/14 ,  H01L24/15 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/11831 ,  H01L2224/11901 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/351 ,  H04B1/712 ,  H01L2224/13099 ,  H01L2924/00

摘要： The invention provides a new method and chip scale package is provided. The inventions starts with a substrate over which a contact point is provided, the contact point is exposed through an opening created in the layer of passivation and a layer of polymer or elastomer. A barrier/seed layer is deposited, a first photoresist mask is created exposing the barrier/seed layer where this layer overlies the contact pad and, contiguous therewith, over a surface area that is adjacent to the contact pad and emanating in one direction from the contact pad. The exposed surface of the barrier/seed layer is electroplated for the creation of interconnect traces. The first photoresist mask is removed from the surface of the barrier/seed layer. A second photoresist mask, defining the solder bump, is created exposing the surface area of the barrier/seed layer that is adjacent to the contact pad and emanating in one direction from the contact pad. The solder bump is created in accordance with the second photoresist mask, the second photoresist mask is removed from the surface of the barrier/seed layer, exposing the electroplating and the barrier/seed layer with the metal plating overlying the barrier/seed layer. The exposed barrier/seed layer is etched in accordance with the pattern formed by the electroplating, reflow of the solder bump is optionally performed.

摘要翻译： 本发明提供了一种新的方法和芯片级封装。 本发明从提供接触点的基底开始，接触点通过在钝化层中形成的开口和聚合物或弹性体层暴露。 形成屏障/种子层，产生第一光致抗蚀剂掩模，暴露阻挡层/籽晶层，其中该层覆盖在接触焊盘上，并与其邻接，在与接触焊盘相邻的表面区域上并且沿一个方向从 接触垫 电镀/种子层的暴露表面被电镀以产生互连迹线。 从阻挡层/种子层的表面去除第一光致抗蚀剂掩模。 产生限定焊料凸块的第二光致抗蚀剂掩模产生暴露与接触焊盘相邻并且在一个方向上从接触焊盘发出的势垒/种子层的表面积。 根据第二光致抗蚀剂掩模产生焊料凸块，从阻挡层/种子层的表面去除第二光致抗蚀剂掩模，用覆盖在阻挡层/种子层上的金属电镀暴露电镀和阻挡层/籽晶层。 根据由电镀形成的图案蚀刻暴露的阻挡层/籽晶层，任选地进行焊料凸点的回流。

公开(公告)号：US20100038803A9

公开(公告)日：2010-02-18

申请号：US11930210

申请日：2007-10-31

申请人： Jin-Yuan Lee ,  Ming-Ta Lei ,  Ching-Cheng Huang ,  Chuen-Jye Lin

发明人： Jin-Yuan Lee ,  Ming-Ta Lei ,  Ching-Cheng Huang ,  Chuen-Jye Lin

IPC分类号： H01L23/52

CPC分类号： H01L24/12 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/525 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/45099 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/351 ,  H04B1/712 ,  H05K3/108 ,  H05K3/243 ,  H05K3/3473 ,  H05K2201/0367 ,  H05K2201/09436 ,  H05K2201/0949 ,  H05K2203/043 ,  H05K2203/054 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： The invention provides a new method and chip scale package is provided. The inventions starts with a substrate over which a contact point is provided, the contact point is exposed through an opening created in the layer of passivation and a layer of polymer or elastomer. A barrier/seed layer is deposited, a first photoresist mask is created exposing the barrier/seed layer where this layer overlies the contact pad and, contiguous therewith, over a surface area that is adjacent to the contact pad and emanating in one direction from the contact pad. The exposed surface of the barrier/seed layer is electroplated for the creation of interconnect traces. The first photoresist mask is removed from the surface of the barrier/seed layer. A second photoresist mask, defining the solder bump, is created exposing the surface area of the barrier/seed layer that is adjacent to the contact pad and emanating in one direction from the contact pad. The solder bump is created in accordance with the second photoresist mask, the second photoresist mask is removed from the surface of the barrier/seed layer, exposing the electroplating and the barrier/seed layer with the metal plating overlying the barrier/seed layer. The exposed barrier/seed layer is etched in accordance with the pattern formed by the electroplating, reflow of the solder bump is optionally performed.

摘要翻译： 本发明提供了一种新的方法和芯片级封装。 本发明从提供接触点的基底开始，接触点通过在钝化层中形成的开口和聚合物或弹性体层暴露。 形成屏障/种子层，产生第一光致抗蚀剂掩模，暴露阻挡层/籽晶层，其中该层覆盖在接触焊盘上，并与其邻接，在与接触焊盘相邻的表面区域上并且沿一个方向从 接触垫 电镀/种子层的暴露表面被电镀以产生互连迹线。 从阻挡层/种子层的表面去除第一光致抗蚀剂掩模。 产生限定焊料凸块的第二光致抗蚀剂掩模产生暴露与接触焊盘相邻并且在一个方向上从接触焊盘发出的势垒/种子层的表面积。 根据第二光致抗蚀剂掩模产生焊料凸块，从阻挡层/种子层的表面去除第二光致抗蚀剂掩模，用覆盖在阻挡层/种子层上的金属电镀暴露电镀和阻挡层/籽晶层。 根据由电镀形成的图案蚀刻暴露的阻挡层/籽晶层，任选地进行焊料凸点的回流。

公开(公告)号：US20090137110A9

公开(公告)日：2009-05-28

申请号：US11930220

申请日：2007-10-31

申请人： Jin Yuan Lee ,  Ming Ta Lei ,  Ching-Cheng Huang ,  Chuen-Jye Lin

发明人： Jin Yuan Lee ,  Ming Ta Lei ,  Ching-Cheng Huang ,  Chuen-Jye Lin

IPC分类号： H01L21/441

CPC分类号： H04B1/7113 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3128 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/14 ,  H01L24/15 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/11831 ,  H01L2224/11901 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/351 ,  H04B1/712 ,  H01L2224/13099 ,  H01L2924/00

摘要： The invention provides a new method and chip scale package is provided. The inventions starts with a substrate over which a contact point is provided, the contact point is exposed through an opening created in the layer of passivation and a layer of polymer or elastomer. A barrier/seed layer is deposited, a first photoresist mask is created exposing the barrier/seed layer where this layer overlies the contact pad and, contiguous therewith, over a surface area that is adjacent to the contact pad and emanating in one direction from the contact pad. The exposed surface of the barrier/seed layer is electroplated for the creation of interconnect traces. The first photoresist mask is removed from the surface of the barrier/seed layer. A second photoresist mask, defining the solder bump, is created exposing the surface area of the barrier/seed layer that is adjacent to the contact pad and emanating in one direction from the contact pad. The solder bump is created in accordance with the second photoresist mask, the second photoresist mask is removed from the surface of the barrier/seed layer, exposing the electroplating and the barrier/seed layer with the metal plating overlying the barrier/seed layer. The exposed barrier/seed layer is etched in accordance with the pattern formed by the electroplating, reflow of the solder bump is optionally performed.

摘要翻译： 本发明提供了一种新的方法和芯片级封装。 本发明从提供接触点的基底开始，接触点通过在钝化层中形成的开口和聚合物或弹性体层暴露。 形成屏障/种子层，产生第一光致抗蚀剂掩模，暴露阻挡层/籽晶层，其中该层覆盖在接触焊盘上，并与其邻接，在与接触焊盘相邻的表面区域上并且沿一个方向从 接触垫 电镀/种子层的暴露表面被电镀以产生互连迹线。 从阻挡层/种子层的表面去除第一光致抗蚀剂掩模。 产生限定焊料凸块的第二光致抗蚀剂掩模产生暴露与接触焊盘相邻并且在一个方向上从接触焊盘发出的势垒/种子层的表面积。 根据第二光致抗蚀剂掩模产生焊料凸块，从阻挡层/种子层的表面去除第二光致抗蚀剂掩模，用覆盖在阻挡层/种子层上的金属电镀暴露电镀和阻挡层/籽晶层。 根据由电镀形成的图案蚀刻暴露的阻挡层/籽晶层，任选地进行焊料凸点的回流。

公开(公告)号：US20080099928A1

公开(公告)日：2008-05-01

申请号：US11930210

申请日：2007-10-31

申请人： Jin-Yuan Lee ,  Ming-Ta Lei ,  Ching-Cheng Huang ,  Chuen-Jye Lin

发明人： Jin-Yuan Lee ,  Ming-Ta Lei ,  Ching-Cheng Huang ,  Chuen-Jye Lin

IPC分类号： H01L23/52

CPC分类号： H01L24/12 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/525 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/45099 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/351 ,  H04B1/712 ,  H05K3/108 ,  H05K3/243 ,  H05K3/3473 ,  H05K2201/0367 ,  H05K2201/09436 ,  H05K2201/0949 ,  H05K2203/043 ,  H05K2203/054 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： The invention provides a new method and chip scale package is provided. The inventions starts with a substrate over which a contact point is provided, the contact point is exposed through an opening created in the layer of passivation and a layer of polymer or elastomer. A barrier/seed layer is deposited, a first photoresist mask is created exposing the barrier/seed layer where this layer overlies the contact pad and, contiguous therewith, over a surface area that is adjacent to the contact pad and emanating in one direction from the contact pad. The exposed surface of the barrier/seed layer is electroplated for the creation of interconnect traces. The first photoresist mask is removed from the surface of the barrier/seed layer. A second photoresist mask, defining the solder bump, is created exposing the surface area of the barrier/seed layer that is adjacent to the contact pad and emanating in one direction from the contact pad. The solder bump is created in accordance with the second photoresist mask, the second photoresist mask is removed from the surface of the barrier/seed layer, exposing the electroplating and the barrier/seed layer with the metal plating overlying the barrier/seed layer. The exposed barrier/seed layer is etched in accordance with the pattern formed by the electroplating, reflow of the solder bump is optionally performed.