Invention Application
WO1988010323A1 COMPLEX COMPOUNDS FOR FORMING THIN FILM OF OXIDE SUPERCONDUCTOR AND PROCESS FOR FORMING THIN FILM OF OXIDE SUPERCONDUCTOR
审中-公开
用于形成氧化物超导体的薄膜的复合化合物和形成氧化物超导体的薄膜的方法
- Patent Title: COMPLEX COMPOUNDS FOR FORMING THIN FILM OF OXIDE SUPERCONDUCTOR AND PROCESS FOR FORMING THIN FILM OF OXIDE SUPERCONDUCTOR
- Patent Title (中): 用于形成氧化物超导体的薄膜的复合化合物和形成氧化物超导体的薄膜的方法
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Application No.: PCT/JP1988000574Application Date: 1988-06-15
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Publication No.: WO1988010323A1Publication Date: 1988-12-29
- Inventor: KAWASAKI STEEL CORPORATION
- Applicant: KAWASAKI STEEL CORPORATION , TAKAHASHI, Makoto; , UMINO, Hiroshi;
- Assignee: KAWASAKI STEEL CORPORATION,TAKAHASHI, Makoto;,UMINO, Hiroshi;
- Current Assignee: KAWASAKI STEEL CORPORATION,TAKAHASHI, Makoto;,UMINO, Hiroshi;
- Priority: JP62/147975 19870616
- Main IPC: C23C16/18
- IPC: C23C16/18
Abstract:
A thin superconductor film is formed by mixing a gas of a complex compound between an alkaline earth metal and a partially halogen-substituted organometallic compound, a gas of an organometallic compound (halide) of a group IIIa element, and a gas of an organometallic compound (halide) of a transition metal with each other, thermally decomposing this mixture under a given oxygen partial pressure, and depositing a composite of oxides of the above-described metals on a base. In this process a novel complex compound between an organic compound having the structure (I) as the ligand and having 3 or 6 halogen atoms substituting protons and an alkali metal is preferably used as the complex compound.
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