A charge-coupled imager includes in a substrate (12) of a semiconductor material a plurality of spaced photodetectors (16) arranged in a line. The photodetectors (16) are each of a type that can be completely depleted. A suitable photodetector (16) is a pinned photodiode. A separate accumulation region (18) is contiguous with one side of each of the photodetectors (16). A potential is applied to each accumulation region (18) which forms an accumulation well (38) therein which is lower than that in its respective photodiode so that charge carriers generated in the photodiode will continuously flow into the accumulation region (18). An anti-blooming drain (24) is provided adjacent each accumulation region (18) with the potential barrier between the anti-blooming drain (24) and the accumulation region (18) being below thepotential well in the photodiode so that when the accumulation region (18) fills with charge carriers to the level of the potential barrier any additional charge carriers will overflow into the anti-blooming drain (24). This maintains the level of the potential well (38) in the accumulation region (18) below that in the photodiode to allow the continuous flow of charge carriers from the photodiode into the accumulation region. A CCD shift register (20) extends along the line of accumulation region (18) and has a transfer gate (29) which allows the charge carriers in the accumulation regions (18) to be transferred into the shift register (20).