Abstract:
An integrated circuit includes a substrate; a sealing element spanning a periphery of the substrate that forms a protective boundary for the substrate; a plurality of copper lines spanning the substrate in at least two distinct layers contained within the protective boundary; a first conducting element disposed outside the sealing element; and one or more second conducting elements connecting at least two of the copper lines and that spans the sealing element; wherein the conducting elements are substantially non-oxidizing metals that are resistant to oxidization and that connect the copper line to the first conducting element.
Abstract:
An image sensor is disclosed which is adapted to sense a color image and comprises three channels (11, 15, 17), one for each of the primary colors. Each channel is identical except for the color of the filter associated therewith. In order to provide the optimum exposure time for each of the colors, the integration time (τexp) for each of the channels is controlled independently. The line readout time (τline) for each of the channels is maintained the same, however, so that the three channels (11, 15, 17) can be read out in parallel.
Abstract:
A charge-coupled imager includes in a substrate (12) of a semiconductor material a plurality of spaced photodetectors (16) arranged in a line. The photodetectors (16) are each of a type that can be completely depleted. A suitable photodetector (16) is a pinned photodiode. A separate accumulation region (18) is contiguous with one side of each of the photodetectors (16). A potential is applied to each accumulation region (18) which forms an accumulation well (38) therein which is lower than that in its respective photodiode so that charge carriers generated in the photodiode will continuously flow into the accumulation region (18). An anti-blooming drain (24) is provided adjacent each accumulation region (18) with the potential barrier between the anti-blooming drain (24) and the accumulation region (18) being below thepotential well in the photodiode so that when the accumulation region (18) fills with charge carriers to the level of the potential barrier any additional charge carriers will overflow into the anti-blooming drain (24). This maintains the level of the potential well (38) in the accumulation region (18) below that in the photodiode to allow the continuous flow of charge carriers from the photodiode into the accumulation region. A CCD shift register (20) extends along the line of accumulation region (18) and has a transfer gate (29) which allows the charge carriers in the accumulation regions (18) to be transferred into the shift register (20).
Abstract:
A microshutter array has a frame having a light transmissive portion. Linear microshutter elements extend across the light transmissive portion and in parallel to each other. Each microshutter element has a flat blade extended in a length direction and first and second torsion arms extending outwards from each side of the blade in the length direction, the blade extending across the light transmissive portion. There is at least one electrode associated with each linear microshutter element and extended in the length direction parallel to the microshutter element.
Abstract:
An image sensor formed on a P-type substrate (12; 112) includes a plurality of pinned diode photodiodes (18; 118), a CCD shift register (20; 120) and a separate buried transfer gate (22; 122) located between each of the photodiodes (18; 118) and the CCD shift register (20; 120). The photodetectors (18; 118) are arranged in at least one line. The CCD shift register (20; 120) extends along the line of photodetectors (18; 118). Each of the pinned diode photodetectors (18; 118) includes a first region (24; 124) of N-type conductivity in the substrate (12; 112) and a second region (26; 126) of P+ type conductivity in the first region (24; 124) and along the substrate surface. The CCD shift register (20; 120) includes a channel region (30; 130) of N-type conductivity in the substrate surface and two sets of conductive gates (34, 36; 134) along the channel region (30; 130) and insulated from the substrate surface (14; 114). Each transfer gate (22; 122) includes a transfer channel region (46; 146) of N-type conductivity in the substrate and extending along the substrate surface from the shift register channel region (30; 130) to the first region (24; 124) of its respective photodetector (18; 118). Each gate (34; 134) of one of the sets of shift register gates may have a portion (50; 150) which extends over the transfer gate channel region (46; 146).
Abstract:
A CCD imager includes a substrate (12) of a semiconductor material having a plurality of photodetectors (16) therein at a top surface (14) thereof and arranged either in a line or in an array of rows and columns. A CCD shift register (18) is in the substrate (12) along but spaced from one side of the line or each column of photodetectors (16). Between each photodetector (16) and its adjacent shift register (18) is an accumulation region (20). A transfer gate (26) is provided between the shift register (18) and its adjacent line or column of accumulation regions (20). A transfer gate (28) is provided between each line or row of photodetectors (16) and the adjacent accumulation regions (20). A first anti-blooming drain region (22) is provided along each line or column of photodetectors (16) on the side of the photodetectors opposite the accumulation regions (20). A separate second anti-blooming drain (24) is provided along a side of each accumulation region (20) in the area of the substrate between the shift register (18) and the photodetectors (16).
Abstract:
A motor vehicle system for automatically reporting exception events, comprising: one or more digital cameras, at least one digital camera having a primary function; an image memory system for storing digital images; means for detecting exception events; and a wireless communications system for communicating with a central reporting service. A program memory stores executable instruction for causing a processor to perform the steps of: using at least one of the digital cameras to periodically capture digital images at a specified capture frequency; storing the periodically captured digital images in the image memory for a specified period of time; and receiving input from the means for detecting an exception event. In response to the detection of an exception event a communication link is opened to the central reporting service using the wireless communications system, and one or more of the captured digital images are transmitted to the central reporting service.
Abstract:
An image sensor includes a plurality of photosensitive sites which convert incident light into a charge for forming a bounded array of active imaging pixels; one or more substitutional pixels sites arranged in predetermined locations and interspersed amongst the boundary of the array of active imaging pixels; wherein the substitutional pixels are of a different design from the active imaging pixels which provides data, information or function different from the active pixels for improving performance, operation, manufacture, and/or assembly of the image sensor.
Abstract:
An image sensor is disclosed which comprises a plurality of image sensor elements (14, 16, 18; 14', 16', 18') arranged in rows and columns. Each of the image sensor elements includes a CCD (31, 23, 35; 31', 23', 35'). In order to provide an image sensor which can be used to image in different image formats, the image sensor includes imaging planes on edge surfaces (26, 28; 26', 28') as well as on a top surface (11, 11'). The top and bottom layers (15, 25; 15', 25') of the sensor are of an increased doping level, and these layers serve to guide charge carriers into CCD's (31, 35; 31', 35') located adjacent the edges of the sensor.