Invention Application
WO0174708A3 METHOD FOR DEPOSITING POLYCRYSTALLINE SIGE SUITABLE FOR MICROMACHINING AND DEVICES OBTAINED THEREOF
审中-公开
用于沉积适用于微机电的多晶硅信号的方法及其获得的器件
- Patent Title: METHOD FOR DEPOSITING POLYCRYSTALLINE SIGE SUITABLE FOR MICROMACHINING AND DEVICES OBTAINED THEREOF
- Patent Title (中): 用于沉积适用于微机电的多晶硅信号的方法及其获得的器件
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Application No.: PCT/IB0100765Application Date: 2001-04-05
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Publication No.: WO0174708A3Publication Date: 2002-03-21
- Inventor: SEDKY SHERIF , WITVROUW ANN , BAERT KRIS , CAYMAX MATTY , RUSU CRISTINA
- Applicant: IMEC INTER UNI MICRO ELECTR , SEDKY SHERIF , WITVROUW ANN , BAERT KRIS , CAYMAX MATTY , RUSU CRISTINA
- Assignee: IMEC INTER UNI MICRO ELECTR,SEDKY SHERIF,WITVROUW ANN,BAERT KRIS,CAYMAX MATTY,RUSU CRISTINA
- Current Assignee: IMEC INTER UNI MICRO ELECTR,SEDKY SHERIF,WITVROUW ANN,BAERT KRIS,CAYMAX MATTY,RUSU CRISTINA
- Priority: US19483600 2000-04-05; US19788100 2000-04-17
- Main IPC: B81C1/00
- IPC: B81C1/00 ; C23C16/22 ; H01L21/205 ; H01L31/0368 ; H01L31/18 ; B81B3/00
Abstract:
Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.
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