Invention Application
WO02073658A3 YIELD AND SPEED ENHANCEMENT OF SEMICONDUCTOR INTEGRATED CIRCUITS USING POST-FABRICATION TRANSISTOR MISMATCH COMPENSATION CIRCUITRY
审中-公开
使用后制造晶体管误差补偿电路的半导体集成电路的输入和速度增强
- Patent Title: YIELD AND SPEED ENHANCEMENT OF SEMICONDUCTOR INTEGRATED CIRCUITS USING POST-FABRICATION TRANSISTOR MISMATCH COMPENSATION CIRCUITRY
- Patent Title (中): 使用后制造晶体管误差补偿电路的半导体集成电路的输入和速度增强
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Application No.: PCT/IN0200039Application Date: 2002-03-11
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Publication No.: WO02073658A3Publication Date: 2003-04-03
- Inventor: BHAT NAVAKANTA , MUKHERJEE SUGATO
- Applicant: INDIAN INST SCIENT , BHAT NAVAKANTA , MUKHERJEE SUGATO
- Assignee: INDIAN INST SCIENT,BHAT NAVAKANTA,MUKHERJEE SUGATO
- Current Assignee: INDIAN INST SCIENT,BHAT NAVAKANTA,MUKHERJEE SUGATO
- Priority: IN216CH2001 2001-03-12
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/06 ; G11C11/4091 ; G11C11/413 ; G11C29/50 ; H01L20060101
Abstract:
A novel technique for the enhancement of yield and speed of semiconductor integrated circuits using post fabrication transistor mismatch compensation circuitry is proposed. The system comprises of sense amplifier SA, multiplexer MUX, delay elements Delay-1, Delay-2, and provision for hardwiring fast and slow circuits during packaging. The sense amplifier firing path is split into slow and fast path and the multiplexer can select one of these paths. The memory circuits are tested after fabrication to assess whether they could be partitioned as slow or fast circuits and accordingly an appropriate path is selected by the multiplexer.
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