Invention Application
- Patent Title: 炭化珪素質多孔体及びその製造方法
- Patent Title (English): Silicon carbide based porous article and method for preparation thereof
- Patent Title (中): 基于碳化硅的多孔文章及其制备方法
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Application No.: PCT/JP2002/002970Application Date: 2002-03-27
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Publication No.: WO2002081406A1Publication Date: 2002-10-17
- Inventor: 冨田 崇弘 , 田渕 雄一郎 , 市川 周一 , 原田 節
- Applicant: 日本碍子株式会社 , 冨田 崇弘 , 田渕 雄一郎 , 市川 周一 , 原田 節
- Applicant Address: 〒467-8530 愛知県 名古屋市 瑞穂区須田町2番56号 Aichi JP
- Assignee: 日本碍子株式会社,冨田 崇弘,田渕 雄一郎,市川 周一,原田 節
- Current Assignee: 日本碍子株式会社,冨田 崇弘,田渕 雄一郎,市川 周一,原田 節
- Current Assignee Address: 〒467-8530 愛知県 名古屋市 瑞穂区須田町2番56号 Aichi JP
- Agency: 渡邉 一平
- Priority: JP2001-102008 200103030; JP2002-061989 20020307
- Main IPC: C04B38/00
- IPC: C04B38/00
Abstract:
A silicon carbide based porous article comprising silicon carbide particles (1) as an aggregate and metallic silicon (2), characterized in that the silicon carbide based porous article has an average pore diameter 0.25 times or more the average particle diameter of the silicon carbide particles (1), or in that the carbide particles (1) have an acute contact angle with the metallic silicon (2), or in that it has a porous structure formed by the mutual bonding of a number of secondary structure particles which are formed by the contact of a piece of metallic silicon (1) with four or more of silicon carbide particles (1). The silicon carbide based porous article can be prepared through the sintering at a relatively low firing temperature, and therefore can be prepared at a reduced cost with an improved yield, and thus can be made available to users at a lower price.
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