Invention Application
- Patent Title: RAPID LOW-TEMPERATURE SYNTHESIS OF QUANTUM DOTS
- Patent Title (中): 量子点的快速低温合成
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Application No.: PCT/US2003/021878Application Date: 2003-07-14
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Publication No.: WO2004008550A2Publication Date: 2004-01-22
- Inventor: YOUNG, Bruce, A. , NAUMANN, Christoph
- Applicant: ADVANCED RESEARCH AND TECHNOLOGY INSTITUTE, INC. , YOUNG, Bruce, A. , NAUMANN, Christoph
- Applicant Address: 351 West 10th Street, Indianapolis, IN 46202 US
- Assignee: ADVANCED RESEARCH AND TECHNOLOGY INSTITUTE, INC.,YOUNG, Bruce, A.,NAUMANN, Christoph
- Current Assignee: ADVANCED RESEARCH AND TECHNOLOGY INSTITUTE, INC.,YOUNG, Bruce, A.,NAUMANN, Christoph
- Current Assignee Address: 351 West 10th Street, Indianapolis, IN 46202 US
- Agency: HASAN, Salim, A.
- Priority: US60/395,909 20020715
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
The invention pertains to the rapid low-temperature synthesis of quantum dots, such as CdTe or CdSe, via thermal and sonochemical methods. The methods allow for a stable quantum dot with a coating and linker to be prepared in a single step. The methods use inexpensive, stable reagents and are easy to scale up to allow for industrial-sized quantities. The invention further provides a quantum dot prepared by such methods.
Information query
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