An assembly of a NanoCell comprising a disordered array of metallic islands interlinked with molecules between metallic input/output leads and with disordered arrays of molecules and Au islands is disclosed. The NanoCell may function both as a memory device that is programmable post-fabrication. The assembled NanoCells exhibit reproducible switching behavior and at least two types of memory effects at room temperature. The switch-type memory is characteristic of a destructive read while the conductivity-type memory features a nondestructive read. Both types of s memory effects are stable for more than a week at room temperature and bit level ratios (0:1) of the conductivity-type memory have been observed to be as high as 10 :1 and reaching 10 :1 upon ozone treatment which likely destroys extraneous leakage pathways. The invention demonstrates the efficacy of a disordered nano-scale array for high-yielding switching and memory while mitigating the arduous task of nano-scale patterning.