A structure and associated method for protecting an electrical structure (25) during a fuse link deletion by focused radiation (52). The structure (1 ) comprises a fuse element (2), a protection plate (10), a first dielectric layer (14), and a second dielectric layer (4). The structure (1) is formed within a semiconductor device (5). The protection plate (10) is formed within the first dielectric layer (14) using a damascene process. The second dielectric layer (4) is formed over the protection plate (10) and the first dielectric layer (14). The fuse element (2) is formed over the second dielectric layer (4). The fuse element (2) is adapted to be cut with a laser beam (52). The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14). The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).