公开(公告)号：WO2005034200A3

公开(公告)日：2005-04-14

申请号：PCT/US2004/032404

申请日：2004-09-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GEFFKEN, Robert, M. ,  MOTSIFF, William, T.

Inventor： GEFFKEN, Robert, M. ,  MOTSIFF, William, T.

IPC: H01L21/76

Abstract: An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect (64a) adjacent a second interconnect (64b) on an interconnect level, spacers (60b, 60c) formed along adjacent sides of the first and second interconnects, and an air gap (68) formed between the first and second interconnects. The air gap extends above an upper surface (74a, 74b) of at least one of the first and second interconnects and below a lower surface (76a, 76b) of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.

公开(公告)号：WO2005038876A2

公开(公告)日：2005-04-28

申请号：PCT/US2004/034067

申请日：2004-10-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  MOTSIFF, William, T. ,  MUZZY, Christopher, D.

Inventor： MOTSIFF, William, T. ,  MUZZY, Christopher, D.

IPC: H01L

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and associated method for protecting an electrical structure (25) during a fuse link deletion by focused radiation (52). The structure (1 ) comprises a fuse element (2), a protection plate (10), a first dielectric layer (14), and a second dielectric layer (4). The structure (1) is formed within a semiconductor device (5). The protection plate (10) is formed within the first dielectric layer (14) using a damascene process. The second dielectric layer (4) is formed over the protection plate (10) and the first dielectric layer (14). The fuse element (2) is formed over the second dielectric layer (4). The fuse element (2) is adapted to be cut with a laser beam (52). The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14). The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).

Abstract translation: 用于在通过聚焦辐射（52）删除熔丝链路期间保护电气结构（25）的结构和相关方法。 结构（1）包括熔丝元件（2），保护板（10），第一介电层（14）和第二介电层（4）。 结构（1）形成在半导体器件（5）内。 使用镶嵌工艺在第一介电层（14）内形成保护板（10）。 第二介电层（4）形成在保护板（10）和第一介电层（14）之上。 熔丝元件（2）形成在第二介电层（4）之上。 熔丝元件（2）适于用激光束（52）切割。 第二介电层（4）的介电常数大于第一介电层（14）的介电常数。 保护板（10）适于屏蔽第一电介质层（14）免受来自激光束（52）的能量。

公开(公告)号：WO2005034200A2

公开(公告)日：2005-04-14

申请号：PCT/US2004032404

申请日：2004-09-30

Applicant: IBM ,  GEFFKEN ROBERT M ,  MOTSIFF WILLIAM T

Inventor： GEFFKEN ROBERT M ,  MOTSIFF WILLIAM T

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L

CPC classification number: H01L21/76831 ,  H01L21/76811 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect (64a) adjacent a second interconnect (64b) on an interconnect level, spacers (60b, 60c) formed along adjacent sides of the first and second interconnects, and an air gap (68) formed between the first and second interconnects. The air gap extends above an upper surface (74a, 74b) of at least one of the first and second interconnects and below a lower surface (76a, 76b) of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.

Abstract translation: 可调整的自对准低电容集成电路气隙结构包括邻近互连层上的第二互连（64b）的第一互连（64a），沿第一和第二互连的相邻侧形成的间隔物（60b，60c） 间隙（68）形成在第一和第二互连之间。 空气间隙延伸到第一和第二互连中的至少一个的上表面（74a，74b）上方，并且位于第一和第二互连中的至少一个互连的下表面（76a，76b）的下方以及间隔件之间的距离 定义气隙的宽度。 气隙与第一和第二互连的相邻侧自对准。

公开(公告)号：WO2005038876A3

公开(公告)日：2005-07-14

申请号：PCT/US2004034067

申请日：2004-10-14

Applicant: IBM ,  MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D

Inventor： MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D

IPC: H01L23/525 ,  H01L27/10

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and associated method for protecting an electrical structure (25) during a fuse link deletion by focused radiation (52). The structure (1 ) comprises a fuse element (2), a protection plate (10), a first dielectric layer (14), and a second dielectric layer (4). The structure (1) is formed within a semiconductor device (5). The protection plate (10) is formed within the first dielectric layer (14) using a damascene process. The second dielectric layer (4) is formed over the protection plate (10) and the first dielectric layer (14). The fuse element (2) is formed over the second dielectric layer (4). The fuse element (2) is adapted to be cut with a laser beam (52). The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14). The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).

Abstract translation: 一种用于在通过聚焦辐射（52）的熔丝链断开期间保护电结构（25）的结构和相关方法。 结构（1）包括熔丝元件（2），保护板（10），第一介电层（14）和第二电介质层（4）。 结构（1）形成在半导体器件（5）内。 使用镶嵌工艺在第一介电层（14）内形成保护板（10）。 第二介质层（4）形成在保护板（10）和第一介电层（14）之上。 熔丝元件（2）形成在第二介质层（4）上。 熔丝元件（2）适于用激光束（52）切割。 第二介质层（4）的介电常数大于第一介电层（14）的介电常数。 保护板（10）适于屏蔽来自激光束（52）的能量的第一介电层（14）。

公开(公告)号：WO2005013330A3

公开(公告)日：2005-02-10

申请号：PCT/US2004/024228

申请日：2004-07-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  DAUBENSPECK, Timothy, H. ,  GAMBINO, Jeffrey, P. ,  LUCE, Stephen, E. ,  MCDEVITT, Thomas, J. ,  MOTSIFF, William, T. ,  POULIOT, Mark, J. ,  ROBBINS, Jennifer, C.

Inventor： DAUBENSPECK, Timothy, H. ,  GAMBINO, Jeffrey, P. ,  LUCE, Stephen, E. ,  MCDEVITT, Thomas, J. ,  MOTSIFF, William, T. ,  POULIOT, Mark, J. ,  ROBBINS, Jennifer, C.

IPC: H01L23/28

Abstract: A crack stop (28) for low K dielectric materials of an integrated circuit (IC) formed on an IC chip using metal interconnects which do not form a self-passivating oxide layer, such as copper or silver interconnects, in a low-K dielectric material to prevent damage to the active area of the IC chip caused by chipping and cracking formed along peripheral edges of the IC chip during a dicing operation. A moisture barrier or edge seal (12) is formed as a metal stack positioned along the outer peripheral edges of the active area of the IC chip. The crack stop is formed by at least one trench or groove positioned outside of the moisture barrier/edge seal on the outer periphery of the IC chip.

公开(公告)号：WO2005013330A2

公开(公告)日：2005-02-10

申请号：PCT/US2004024228

申请日：2004-07-28

Applicant: IBM ,  DAUBENSPECK TIMOTHY H ,  GAMBINO JEFFREY P ,  LUCE STEPHEN E ,  MCDEVITT THOMAS J ,  MOTSIFF WILLIAM T ,  POULIOT MARK J ,  ROBBINS JENNIFER C

Inventor： DAUBENSPECK TIMOTHY H ,  GAMBINO JEFFREY P ,  LUCE STEPHEN E ,  MCDEVITT THOMAS J ,  MOTSIFF WILLIAM T ,  POULIOT MARK J ,  ROBBINS JENNIFER C

IPC: H01L20060101 ,  H01L21/301 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/78 ,  H01L23/00 ,  H01L23/28 ,  H01L23/58 ,  H01L

CPC classification number: H01L23/585 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A crack stop (28) for low K dielectric materials of an integrated circuit (IC) formed on an IC chip using metal interconnects which do not form a self-passivating oxide layer, such as copper or silver interconnects, in a low-K dielectric material to prevent damage to the active area of the IC chip caused by chipping and cracking formed along peripheral edges of the IC chip during a dicing operation. A moisture barrier or edge seal (12) is formed as a metal stack positioned along the outer peripheral edges of the active area of the IC chip. The crack stop is formed by at least one trench or groove positioned outside of the moisture barrier/edge seal on the outer periphery of the IC chip.

Abstract translation: 使用金属互连在集成电路（IC）上形成集成电路（IC）的低K电介质材料的裂缝阻挡（28），所述金属互连在低K电介质中不形成自钝化氧化物层（例如铜或银互连） 材料以防止在切割操作期间由于沿着IC芯片的外围边缘形成的碎裂和破裂而导致对IC芯片的有源区域的损坏。 防潮层或边缘密封件（12）形成为沿着IC芯片的有效区域的外周边缘定位的金属堆叠。 通过位于IC芯片的外周上的防潮/边缘密封件外侧的至少一个沟槽或槽来形成止裂件。

公开(公告)号：WO2005048304A3

公开(公告)日：2005-07-28

申请号：PCT/US2004036660

申请日：2004-11-04

Applicant: IBM ,  BADAMI DINESH A ,  LEE TOM C ,  LI BAOZHEN ,  MATUSIEWICZ GERALD ,  MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D ,  WATSON KIMBALL M ,  WYNNE JEAN E

Inventor： BADAMI DINESH A ,  LEE TOM C ,  LI BAOZHEN ,  MATUSIEWICZ GERALD ,  MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D ,  WATSON KIMBALL M ,  WYNNE JEAN E

IPC: H01L23/525 ,  H01L27/10 ,  H01L23/58 ,  H01L29/00

CPC classification number: H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

Abstract translation: 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。 熔丝连接在第一电介质层的顶部。 熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方，直接穿过两个通孔。 两个台面各自包括第三自钝化导电材料。 激光熔丝通过将激光束引导到熔丝链来编程。 控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。 这种电阻变化被检测并转换成数字信号。

公开(公告)号：WO2005048304A2

公开(公告)日：2005-05-26

申请号：PCT/US2004/036660

申请日：2004-11-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  BADAMI, Dinesh, A. ,  LEE, Tom, C. ,  LI, Baozhen ,  MATUSIEWICZ, Gerald ,  MOTSIFF, William, T. ,  MUZZY, Christopher, D. ,  WATSON, Kimball, M. ,  WYNNE, Jean, E.

Inventor： BADAMI, Dinesh, A. ,  LEE, Tom, C. ,  LI, Baozhen ,  MATUSIEWICZ, Gerald ,  MOTSIFF, William, T. ,  MUZZY, Christopher, D. ,  WATSON, Kimball, M. ,  WYNNE, Jean, E.

IPC: H01L

CPC classification number: H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

Abstract translation: 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。 熔丝链接在第一介电层的顶部上。 熔丝链路电连接两个通孔并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方并直接位于两个过孔上方。 两个台面均包括第三自钝化导电材料。 激光熔丝通过将激光束引导至熔丝链路进行编程。 控制激光束使得响应于激光束对熔丝链路的影响，熔丝链路的电阻改变但熔丝链路不被熔断。 这种电阻变化被感测并转换成数字信号。