Invention Application
- Patent Title: ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR HIGH SPEED TECHNOLOGIES WITH MIXED AND ULTRA-LOW VOLTAGE SUPPLIES
- Patent Title (中): 具有混合和超低电压供应的高速技术的静电放电保护结构
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Application No.: PCT/US2005026332Application Date: 2005-07-25
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Publication No.: WO2006014875A3Publication Date: 2006-09-08
- Inventor: MERGENS MARKUS PAUL JOSEF , RUSS CORNELIUS CHRISTIAN , ARMER JOHN , VERHAEGE KOEN GERARD MARIA
- Applicant: SARNOFF CORP , SARNOFF EUROP BVBA , MERGENS MARKUS PAUL JOSEF , RUSS CORNELIUS CHRISTIAN , ARMER JOHN , VERHAEGE KOEN GERARD MARIA
- Assignee: SARNOFF CORP,SARNOFF EUROP BVBA,MERGENS MARKUS PAUL JOSEF,RUSS CORNELIUS CHRISTIAN,ARMER JOHN,VERHAEGE KOEN GERARD MARIA
- Current Assignee: SARNOFF CORP,SARNOFF EUROP BVBA,MERGENS MARKUS PAUL JOSEF,RUSS CORNELIUS CHRISTIAN,ARMER JOHN,VERHAEGE KOEN GERARD MARIA
- Priority: US89938304 2004-07-26
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H01L27/02 ; H02H3/20 ; H02H3/22 ; H03K17/0812 ; H03K17/0814 ; H03K17/30
Abstract:
A semiconductor integrated circuit (IC) is provided with an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a pad (102) connected to a first voltage source of a protected circuit node of the IC, and a silicon controlled rectifier (SCR) (106) having an anode coupled to the first voltage source, and the cathode coupled to a second voltage source. Capacitive turn-on devices are coupled between a first gate of the SCR and the first voltage source and a second gate of the SCR and the second voltage source.
Information query
