Invention Application
- Patent Title: GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE
- Patent Title (中): 氮化镓高电子移动晶体管结构
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Application No.: PCT/US2006017823Application Date: 2006-05-09
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Publication No.: WO2006124387A3Publication Date: 2010-09-02
- Inventor: HOKE WILLIAM E , MOSCA JOHN J
- Applicant: RAYTHEON CO , HOKE WILLIAM E , MOSCA JOHN J
- Assignee: RAYTHEON CO,HOKE WILLIAM E,MOSCA JOHN J
- Current Assignee: RAYTHEON CO,HOKE WILLIAM E,MOSCA JOHN J
- Priority: US13253305 2005-05-19
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/335 ; H01L29/20
Abstract:
A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a compound of silicon wherein the first AlN layer is substantially free of silicon.
Information query
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