Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control structure having a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said channel electrode and said output node. The electronic memory has cross-coupled first and second inverters. The input node of the first inverter is coupled to the set electrode of the first nanotube switching element and to the output node of the second nanotube switching element. The input node of the of the second inverter is coupled to the set electrode of the second nanotube switching element and to the output node of the first nanotube switching element; and the channel electrode is coupled to a channel voltage line. The release electrode of the first nanotube switching element is coupled to the release electrode of the second nanotube switching element and wherein both release electrodes are coupled to a release line. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.