MULTIPLE DEVICE TYPES INCLUDING AN INVERTED-T CHANNEL TRANSISTOR AND METHOD THEREFOR

Invention Application

WO2007050288A3 MULTIPLE DEVICE TYPES INCLUDING AN INVERTED-T CHANNEL TRANSISTOR AND METHOD THEREFOR 审中-公开

Title translation: 多种器件类型，包括反相通道晶体管及其方法

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Patent Title: MULTIPLE DEVICE TYPES INCLUDING AN INVERTED-T CHANNEL TRANSISTOR AND METHOD THEREFOR
Patent Title (中): 多种器件类型，包括反相通道晶体管及其方法
Application No.: PCT/US2006039651

Application Date: 2006-10-10
Publication No.: WO2007050288A3

Publication Date: 2008-01-03
Inventor: MIN BYOUNG W , BURNETT JAMES D , MATHEW LEO
Applicant: FREESCALE SEMICONDUCTOR INC , MIN BYOUNG W , BURNETT JAMES D , MATHEW LEO
Assignee: FREESCALE SEMICONDUCTOR INC,MIN BYOUNG W,BURNETT JAMES D,MATHEW LEO
Current Assignee: FREESCALE SEMICONDUCTOR INC,MIN BYOUNG W,BURNETT JAMES D,MATHEW LEO
Priority: US25797205 2005-10-25
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L29/76 ; H01L29/94 ; H01L31/00

MULTIPLE DEVICE TYPES INCLUDING AN INVERTED-T CHANNEL TRANSISTOR AND METHOD THEREFOR

Abstract:

A method for making a semiconductor device (10) is provided. The method includes forming a first transistor (94) with a vertical active region (56) and a horizontal active region (54) extending on both sides of the vertical active region (56). The method further includes forming a second transistor (96) with a vertical active region (58). The method further includes forming a third transistor (98) with a vertical active region (60) and a horizontal active region (54) extending on only one side of the vertical active region (60).

Abstract(Chinese):

提供一种制造半导体器件（10）的方法。该方法包括形成具有在垂直有源区（56）的两侧延伸的垂直有源区（56）和水平有源区（54）的第一晶体管（94）。该方法还包括形成具有垂直有源区（58）的第二晶体管（96）。该方法还包括形成具有仅在垂直有源区域（60）的一侧上延伸的垂直有源区域（60）和水平有源区域（54）的第三晶体管（98）。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）