WET ETCH SUITABLE FOR CREATING SQUARE CUTS IN SI AND RESULTING STRUCTURES

Invention Application

WO2007143072A2 WET ETCH SUITABLE FOR CREATING SQUARE CUTS IN SI AND RESULTING STRUCTURES 审中-公开

Title translation: 适用于在SI和结构结构中创建正方形

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Patent Title: WET ETCH SUITABLE FOR CREATING SQUARE CUTS IN SI AND RESULTING STRUCTURES
Patent Title (中): 适用于在SI和结构结构中创建正方形
Application No.: PCT/US2007012904

Application Date: 2007-05-31
Publication No.: WO2007143072A2

Publication Date: 2007-12-13
Inventor: LEE WHONCHEE , FUCSKO JANOS , WELLS DAVID H
Applicant: MICRON TECHNOLOGY INC , LEE WHONCHEE , FUCSKO JANOS , WELLS DAVID H
Assignee: MICRON TECHNOLOGY INC,LEE WHONCHEE,FUCSKO JANOS,WELLS DAVID H
Current Assignee: MICRON TECHNOLOGY INC,LEE WHONCHEE,FUCSKO JANOS,WELLS DAVID H
Priority: US44571806 2006-06-02
Main IPC: H01L21/306
IPC: H01L21/306 ; B81C1/00 ; C30B29/06 ; C30B33/08

WET ETCH SUITABLE FOR CREATING SQUARE CUTS IN SI AND RESULTING STRUCTURES

Abstract:

A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

Abstract(Chinese):

单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。当沿<100>方向图案化时，所得结构包括底切特征。

Public/Granted literature

WO2007143072B1 WET ETCH SUITABLE FOR CREATING SQUARE CUTS IN SI AND RESULTING STRUCTURES Public/Granted day:2008-04-10

Information query

Global Dossier Patent Scope Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）