Invention Application
- Patent Title: METHODS AND APPARATUS FOR DEPOSITING A MICROCRYSTALLINE SILICON FILM FOR PHOTOVOLTAIC DEVICE
- Patent Title (中): 用于光伏器件沉积微晶硅膜的方法和装置
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Application No.: PCT/US2007071703Application Date: 2007-06-20
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Publication No.: WO2007149945A2Publication Date: 2007-12-27
- Inventor: CHOI SOO YOUNG , TAKEHARA TAKAKO , WHITE JOHN M , CHAE YONG KEE
- Applicant: APPLIED MATERIALS INC , CHOI SOO YOUNG , TAKEHARA TAKAKO , WHITE JOHN M , CHAE YONG KEE
- Assignee: APPLIED MATERIALS INC,CHOI SOO YOUNG,TAKEHARA TAKAKO,WHITE JOHN M,CHAE YONG KEE
- Current Assignee: APPLIED MATERIALS INC,CHOI SOO YOUNG,TAKEHARA TAKAKO,WHITE JOHN M,CHAE YONG KEE
- Priority: US42612706 2006-06-23
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/20 ; H01L21/36 ; H05H1/24
Abstract:
Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.
Information query
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