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    METHODS OF FORMING A THIN-FILM SOLAR ENERGY DEVICE
    1.
    发明申请
    METHODS OF FORMING A THIN-FILM SOLAR ENERGY DEVICE 审中-公开

    公开(公告)号：WO2011119332A3

    公开(公告)日：2011-09-29

    申请号：PCT/US2011/027676

    申请日：2011-03-09

    Applicant: APPLIED MATERIALS, INC. ,  SHENG, Shuran ,  CHAE, Yong Kee

    Inventor： SHENG, Shuran ,  CHAE, Yong Kee

    IPC: H01L31/18 ,  H01L31/042

    Abstract: A method and apparatus for making solar cell active layers is provided. A doped microcrystalline semiconductor layer is formed with a bandgap-enhancing alloy material at low hydrogen flow rates. Deposition conditions are established at a low flowrate of the semiconductor source and ramped to a high flowrate as a first sublayer is deposited. The bandgap-enhancing alloy material is added to the reaction mixture to deposit a second sublayer. The bandgap-enhancing alloy material may optionally be stopped to deposit a third sublayer.

    MICROCRYSTALLINE SILICON DEPOSITION FOR THIN FILM SOLAR APPLICATIONS
    5.
    发明申请
    MICROCRYSTALLINE SILICON DEPOSITION FOR THIN FILM SOLAR APPLICATIONS 审中-公开
    薄膜太阳能应用的微晶硅沉积

    公开(公告)号：WO2009055502A1

    公开(公告)日：2009-04-30

    申请号：PCT/US2008/080834

    申请日：2008-10-22

    Applicant: APPLIED MATERIALS, INC. ,  CHAE, Yong Kee ,  CHOI, Soo Young ,  SHENG, Shuran

    Inventor： CHAE, Yong Kee ,  CHOI, Soo Young ,  SHENG, Shuran

    IPC: H01L31/00

    CPC classification number: H01L31/075 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    Abstract: Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.

    Abstract translation: 权利要求中所述的本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 在一个实施例中，提供了一种在衬底上形成薄膜多结太阳能电池的方法。 该方法包括将基底定位在反应区中，向反应区提供气体混合物，其中气体混合物包含含硅化合物和氢气，在第一个衬底上形成本征型微晶硅层的第一区域 沉积速率，以高于第一沉积速率的第二沉积速率在衬底上形成本征型微晶硅层的第二区域，并以第三沉积速率在衬底上形成本征型微晶硅层的第三区域 比第二沉积速率。

    METHOD OF DYNAMIC TEMPERATURE CONTROL DURING MICROCRYSTALLINE SI GROWTH
    6.
    发明申请
    METHOD OF DYNAMIC TEMPERATURE CONTROL DURING MICROCRYSTALLINE SI GROWTH 审中-公开
    微晶玻璃生长过程中动态温度控制方法

    公开(公告)号：WO2009055229A1

    公开(公告)日：2009-04-30

    申请号：PCT/US2008/078696

    申请日：2008-10-03

    Applicant: APPLIED MATERIALS, INC. ,  CHAE, Yong Kee ,  CHOI, Soo Young

    Inventor： CHAE, Yong Kee ,  CHOI, Soo Young

    IPC: H01L31/00

    CPC classification number: H01L31/1824 ,  C23C16/24 ,  C23C16/46 ,  Y02E10/545 ,  Y02P70/521

    Abstract: The present invention generally comprises a method for dynamically controlling the temperature of a solar cell substrate during microcrystalline silicon deposition. In amorphous silicon/microcrystalline tandem solar cells, microcrystalline silicon may be deposited using a higher power density and to a greater thickness than amorphous silicon. The higher the power density applied, the faster the deposition may occur, but the temperature of the deposition may also increase. At high temperatures, the likelihood of dopant diffusing into the intrinsic layer of the solar cell and damaging the cell is greater. By dynamically controlling the temperature of the susceptor, the substrate and hence, the dopant can be maintained at a substantially constant temperature below the value at which the dopant may diffuse into the intrinsic layer. The dynamic temperature control permits the microcrystalline silicon to be deposited at a high power density without damaging the solar cell.

    Abstract translation: 本发明通常包括在微晶硅沉积期间动态地控制太阳能电池基板的温度的方法。 在非晶硅/微晶串联太阳能电池中，可以使用比非晶硅更高的功率密度和更大的厚度来沉积微晶硅。 施加的功率密度越高，沉积可能发生的越快，但沉积的温度也可能增加。 在高温下，掺杂剂扩散到太阳能电池的本征层并损坏电池的可能性更大。 通过动态地控制基座的温度，衬底和因此掺杂剂可以保持在低于掺杂剂可以扩散到本征层的值的基本上恒定的温度。 动态温度控制允许以高功率密度沉积微晶硅而不损坏太阳能电池。

    APPARATUSES AND METHODS OF SUBSTRATE TEMPERATURE CONTROL DURING THIN FILM SOLAR MANUFACTURING
    7.
    发明申请
    APPARATUSES AND METHODS OF SUBSTRATE TEMPERATURE CONTROL DURING THIN FILM SOLAR MANUFACTURING 审中-公开
    薄膜太阳能制造过程中基板温度控制的设备及方法

    公开(公告)号：WO2009015277A1

    公开(公告)日：2009-01-29

    申请号：PCT/US2008/071024

    申请日：2008-07-24

    Applicant: APPLIED MATERIALS, INC. ,  CHOI, Soo Young ,  KADAM, Ankur ,  CHAE, Yong Kee

    Inventor： CHOI, Soo Young ,  KADAM, Ankur ,  CHAE, Yong Kee

    IPC: H01L21/00

    CPC classification number: H01L21/67236 ,  H01L21/67201

    Abstract: Apparatus and methods of substrate temperature control during thin film solar cell manufacturing are provided. One method comprises performing a temperature stabilization process on a substrate to pre-heat the substrate for a time period in a first chamber, calculating a wait time period for a second chamber, wherein the wait time period is bases on the availability of the second chamber, the availability of a vacuum transfer robot adapted to transfer the substrate from the first chamber to the second chamber, or both, and adjusting the temperature stabilization time period to compensate for the loss of heat from the substrate during the wait time period.

    Abstract translation: 提供了在薄膜太阳能电池制造期间的衬底温度控制的装置和方法。 一种方法包括在基板上执行温度稳定处理以在第一室中预热基板一段时间，计算第二室的等待时间段，其中等待时间段基于第二室的可用性 适用于将衬底从第一腔室转移到第二腔室的真空传送机器人的可用性，或两者，以及调整温度稳定时间周期以补偿在等待时间段期间来自衬底的热量损失。

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