Invention Application
WO2008002844A3 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE
审中-公开
用改进的密度和步骤覆盖沉积非晶碳膜的方法
- Patent Title: METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE
- Patent Title (中): 用改进的密度和步骤覆盖沉积非晶碳膜的方法
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Application No.: PCT/US2007071923Application Date: 2007-06-22
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Publication No.: WO2008002844A3Publication Date: 2008-08-07
- Inventor: PADHI DEENESH , HA HYOUNG-CHAN , RATHI SUDHA , WITTY DEREK R , CHAN CHIU , PARK SOHYUN , BALASUBRAMANIAN GANESH , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM
- Applicant: APPLIED MATERIALS INC , PADHI DEENESH , HA HYOUNG-CHAN , RATHI SUDHA , WITTY DEREK R , CHAN CHIU , PARK SOHYUN , BALASUBRAMANIAN GANESH , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM
- Assignee: APPLIED MATERIALS INC,PADHI DEENESH,HA HYOUNG-CHAN,RATHI SUDHA,WITTY DEREK R,CHAN CHIU,PARK SOHYUN,BALASUBRAMANIAN GANESH,JANAKIRAMAN KARTHIK,SEAMONS MARTIN JAY,SIVARAMAKRISHNAN VISWESWAREN,KIM BOK HOEN,M SAAD HICHEM
- Current Assignee: APPLIED MATERIALS INC,PADHI DEENESH,HA HYOUNG-CHAN,RATHI SUDHA,WITTY DEREK R,CHAN CHIU,PARK SOHYUN,BALASUBRAMANIAN GANESH,JANAKIRAMAN KARTHIK,SEAMONS MARTIN JAY,SIVARAMAKRISHNAN VISWESWAREN,KIM BOK HOEN,M SAAD HICHEM
- Priority: US42732406 2006-06-28
- Main IPC: H05H1/24
- IPC: H05H1/24
Abstract:
A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
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