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    PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS
    1.
    发明申请
    PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS 审中-公开
    用于形成钴和钴硅酸盐材料的方法在TUNGSTEN联系应用中

    公开(公告)号：WO2009134916A2

    公开(公告)日：2009-11-05

    申请号：PCT/US2009/042153

    申请日：2009-04-29

    Applicant: APPLIED MATERIALS, INC. ,  GANGULI, Seshadri ,  YU, Sang-Ho ,  PHAN, See-Eng ,  CHANG, Mei ,  KHANDELWAL, Amit ,  HA, Hyoung-Chan

    Inventor： GANGULI, Seshadri ,  YU, Sang-Ho ,  PHAN, See-Eng ,  CHANG, Mei ,  KHANDELWAL, Amit ,  HA, Hyoung-Chan

    IPC: H01L21/205 ,  H01L21/336

    CPC classification number: H01L21/68792 ,  C23C16/06 ,  C23C16/42 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665

    Abstract: Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over or on a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over or on the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over or on the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.

    Abstract translation: 本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺形成钴硅化物层和金属钴层的方法。 在一个实施例中，提供了一种用于在衬底上形成含金属硅化物的材料的方法，该方法包括在气相沉积工艺期间，通过依次沉积多个金属硅化物层和甲硅烷基层，在含硅表面之上或之上形成金属硅化物材料 在衬底上，在金属硅化物材料上或之上沉积金属覆盖层，在退火过程期间加热衬底，以及在屏障材料上或之上沉积金属接触材料。 在一个实例中，金属硅化物层和金属覆盖层都含有钴。 钴硅化物材料可以含有约1.9或更大，例如大于约2.0，或约2.2或更大的硅/钴原子比。

    CHEMICAL VAPOR DEPOSITION OF RUTHENIUM FILMS CONTAINING OXYGEN OR CARBON
    6.
    发明申请
    CHEMICAL VAPOR DEPOSITION OF RUTHENIUM FILMS CONTAINING OXYGEN OR CARBON 审中-公开
    包含氧气或碳氢化合物的薄膜的化学气相沉积

    公开(公告)号：WO2011159691A3

    公开(公告)日：2012-06-14

    申请号：PCT/US2011040336

    申请日：2011-06-14

    Applicant: APPLIED MATERIALS INC ,  KIM HOON ,  LEE SANG-HYEOB ,  YU SANG HO ,  LEE WEI TI ,  GANGULI SESHADRI ,  HA HYOUNG-CHAN

    Inventor： KIM HOON ,  LEE SANG-HYEOB ,  YU SANG HO ,  LEE WEI TI ,  GANGULI SESHADRI ,  HA HYOUNG-CHAN

    IPC: H01L21/31 ,  H01L21/205

    CPC classification number: H01L28/65 ,  B82Y40/00 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L28/91

    Abstract: Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.

    Abstract translation: 本文提供了沉积含钌膜的方法。 在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基材上， 并将沉积的含钌膜暴露于含氧气体中以从沉积的含钌膜中除去至少一些碳。 在一些实施方案中，含氧气体暴露的含钌膜可以在含氢气体中退火以从含钌膜中除去至少一些氧。 在一些实施例中，可以重复沉积，曝光和退火以将含钌膜沉积到所需厚度。

    METHODS FOR FORMING BARRIER/SEED LAYERS FOR COPPER INTERCONNECT STRUCTURES
    8.
    发明申请
    METHODS FOR FORMING BARRIER/SEED LAYERS FOR COPPER INTERCONNECT STRUCTURES 审中-公开
    用于形成用于铜互连结构的障碍物/种子层的方法

    公开(公告)号：WO2012009308A2

    公开(公告)日：2012-01-19

    申请号：PCT/US2011043626

    申请日：2011-07-12

    Applicant: APPLIED MATERIALS INC ,  KIM HOON ,  LEE WEI TI ,  YU SANG HO ,  GANGULI SESHADRI ,  HA HYOUNG-CHAN ,  LEE SANG-HYEOB

    Inventor： KIM HOON ,  LEE WEI TI ,  YU SANG HO ,  GANGULI SESHADRI ,  HA HYOUNG-CHAN ,  LEE SANG-HYEOB

    IPC: H01L21/28 ,  H01L21/285

    CPC classification number: C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76898

    Abstract: Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).

    Abstract translation: 本文提供了用于形成用于互连结构的阻挡层/种子层的方法。 在一些实施方案中，一种处理基材的方法，所述基材具有形成在基材的第一表面中的开口，所述开口具有侧壁和底表面，所述方法可以包括形成包含锰（Mn）和钌中的至少一种的层 （Ru）或钴（Co）在开口的侧壁和底表面上; 以及在所述层上沉积导电材料以填充所述开口。 在一些实施例中，钌（Ru）或钴（Co）之一沉积在开口的侧壁和底表面上。 材料可以通过化学气相沉积（CVD）或物理气相沉积（PVD）沉积。

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