Invention Application
- Patent Title: THIN-LAYERED MAGNETIC DEVICE WITH HIGH SPIN POLARIZATION PERPENDICULAR TO THE PLANE OF THE LAYERS, AND MAGNETIC TUNNEL JUNCTION AND SPIN VALVE USING SUCH A DEVICE
- Patent Title (中): 具有高层螺旋极化的薄层磁性装置,并且使用这种装置的磁性隧道结和旋转阀
-
Application No.: PCT/FR2007051659Application Date: 2007-07-13
-
Publication No.: WO2008015354A3Publication Date: 2008-03-27
- Inventor: RODMACQ BERNARD , DIENY BERNARD
- Applicant: COMMISSARIAT ENERGIE ATOMIQUE , RODMACQ BERNARD , DIENY BERNARD
- Assignee: COMMISSARIAT ENERGIE ATOMIQUE,RODMACQ BERNARD,DIENY BERNARD
- Current Assignee: COMMISSARIAT ENERGIE ATOMIQUE,RODMACQ BERNARD,DIENY BERNARD
- Priority: FR0653266 2006-08-03
- Main IPC: H01F10/32
- IPC: H01F10/32
Abstract:
The invention concerns a thin-layered magnetic device comprising, on a substrate, a composite assembly deposited by cathode spraying and composed of a magnetic layer (2) made from a material having high perpendicular magnetic anisotropy, the magnetization of which, in the absence of any electrical or magnetic interaction, is located outside the plane of said layer, a magnetic layer (3) in direct contact with the preceding magnetic layer (2), made from a ferromagnetic material with a high spin polarization rate, the magnetization of which, in the absence of any electrical or magnetic interaction, is located inside the plane of this layer, the direct magnetic coupling of this layer with said magnetic layer (2) inducing a reduction in the effective demagnetizing field of the assembly composed of the two magnetic layers (2) and (3), and a nonmagnetic layer (4) in direct contact with the preceding magnetic layer (3), made from a material that is non-depolarizing for the electrons passing through the device. The device includes means for passing an electric current through itself, in a direction substantially perpendicular to the plane of the layers.
Information query