Invention Application
WO2008016421A2 MIXED-USE MEMORY ARRAY WITH DIFFERENT DATA STATES AND METHOD FOR USE THEREWITH 审中-公开
具有不同数据状态的混合使用存储器阵列及其使用方法

MIXED-USE MEMORY ARRAY WITH DIFFERENT DATA STATES AND METHOD FOR USE THEREWITH
Abstract:
A mixed-use memory array with different data states and a method for use therewith are disclosed. In one preferred embodiment, a memory array is provided comprising a plurality of memory cells, each memory cell comprising a memory element comprising a switchable resistance material configurable to one of at least three resistivity states. A first set of memory cells uses X resistivity states to represent X respective data states, and a second set of memory cells uses Y resistivity states to represent Y respective data states, wherein X≠Y.
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