Invention Application
WO2008016421A2 MIXED-USE MEMORY ARRAY WITH DIFFERENT DATA STATES AND METHOD FOR USE THEREWITH
审中-公开
具有不同数据状态的混合使用存储器阵列及其使用方法
- Patent Title: MIXED-USE MEMORY ARRAY WITH DIFFERENT DATA STATES AND METHOD FOR USE THEREWITH
- Patent Title (中): 具有不同数据状态的混合使用存储器阵列及其使用方法
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Application No.: PCT/US2007/013772Application Date: 2007-06-12
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Publication No.: WO2008016421A2Publication Date: 2008-02-07
- Inventor: SCHEUERLEIN, Roy, E. , PETTI, Christopher, J.
- Applicant: SANDISK 3D LLC , SCHEUERLEIN, Roy, E. , PETTI, Christopher, J.
- Applicant Address: 601 McCarthy Boulevard Milpitas, CA 95035 US
- Assignee: SANDISK 3D LLC,SCHEUERLEIN, Roy, E.,PETTI, Christopher, J.
- Current Assignee: SANDISK 3D LLC,SCHEUERLEIN, Roy, E.,PETTI, Christopher, J.
- Current Assignee Address: 601 McCarthy Boulevard Milpitas, CA 95035 US
- Agency: HETZ, Joseph, F.
- Priority: US11/497,021 20060731; US11/496,870 20060731
- Main IPC: G11C13/02
- IPC: G11C13/02
Abstract:
A mixed-use memory array with different data states and a method for use therewith are disclosed. In one preferred embodiment, a memory array is provided comprising a plurality of memory cells, each memory cell comprising a memory element comprising a switchable resistance material configurable to one of at least three resistivity states. A first set of memory cells uses X resistivity states to represent X respective data states, and a second set of memory cells uses Y resistivity states to represent Y respective data states, wherein X≠Y.
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