ETCHING SOLUTION AND ETCHING METHOD

Invention Application

WO2008089733A3 ETCHING SOLUTION AND ETCHING METHOD 审中-公开

Title translation: 蚀刻液和蚀刻

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Patent Title: ETCHING SOLUTION AND ETCHING METHOD
Patent Title (中): 蚀刻液和蚀刻
Application No.: PCT/DE2008000099

Application Date: 2008-01-22
Publication No.: WO2008089733A3

Publication Date: 2009-01-08
Inventor: FATH PETER , MELNYK IHOR
Applicant: GP SOLAR GMBH , FATH PETER , MELNYK IHOR
Assignee: GP SOLAR GMBH,FATH PETER,MELNYK IHOR
Current Assignee: GP SOLAR GMBH,FATH PETER,MELNYK IHOR
Priority: DE102007004060 2007-01-22
Main IPC: H01L21/306
IPC: H01L21/306

Abstract:

The invention relates to an etching solution (1) comprising water, nitric acid, hydrofluoric acid, and sulphuric acid, containing 15 to 40% by weight of nitric acid, 10 to 41% by weight of sulphuric acid and 0.8 to 2.0% by weight of hydrofluoric acid. The invention also relates to the use of said etching solution for etching silicon and to etching methods for silicon wafers.

Abstract(Chinese):

蚀刻溶液（1），其包括水，硝酸，氢氟酸，和硫酸，其中含有按重量计的硝酸15％至40％，10-41重量％的硫酸和0.8〜2.0重量％的氢氟酸，使用该蚀刻液的硅和蚀刻方法的硅晶片蚀刻，

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）