A method for forming a semiconductor device having abrupt ultra shallow epi-tip regions comprises forming a gate stack on a crystalline substrate, performing a first ion implantation process to amorphisize a first pair of regions of the substrate disposed adjacent to and on laterally opposite sides of the gate stack, forming a pair of spacers on the substrate disposed on laterally opposite sides of the gate stack, performing a second ion implantation process to amorphisize a second pair of regions of the substrate that are disposed on laterally opposite sides of the gate stack and adjacent to the spacers, applying a selective wet etch chemistry to remove the amorphisized first and second pair of regions and form a pair of cavities on laterally opposite sides of the gate stack, and depositing a silicon alloy in the pair of cavities to form source and drain regions and source and drain epi-tip regions.