An approach for providing two-dimensional uniformity correction for ion beam assisted etching is described. In one embodiment, there is a method for ion beam etching a substrate. In this embodiment, an ion implant dose map containing a correlation between implant dose rate and etch rate is retrieved. In addition, a recipe that contains values for ion beam parameters used in the ion beam etching of the substrate is obtained. An ion beam is directed at the surface of the substrate and the surface is etched with the ion beam according to the ion implant dose map and the values of the ion beam parameters in the recipe. The etching of the surface is controlled in accordance with the ion implant dose map and the ion beam parameter values.