A chemical-mechanical polishing liquid is disclosed, which comprises silica doped by aluminum, mixed corrosive inhibitors, water and one or more kinds of the following rate-accelerators: organic acid, fluoride, ammonia, quaternary amine salts and the derivatives thereof. The polishing liquid has higher polishing rate for higher dielectric (such as TEOS), and can secure higher polishing rate adjustability of Cu adjusted by the concentration of oxidizer, and has better the effect of defect-correction, so it can suitably be used in controlling and adjusting the abrasion degree at different line width in semiconductor device.