Invention Application
- Patent Title: METHOD FOR THIN LAYER DEPOSITION
- Patent Title (中): 薄层沉积方法
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Application No.: PCT/FR2009050658Application Date: 2009-04-10
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Publication No.: WO2009136110A3Publication Date: 2010-02-18
- Inventor: DURANDEAU ANNE , KHARCHENKO ANDRIY , NADAUD NICOLAS
- Applicant: SAINT GOBAIN , DURANDEAU ANNE , KHARCHENKO ANDRIY , NADAUD NICOLAS
- Assignee: SAINT GOBAIN,DURANDEAU ANNE,KHARCHENKO ANDRIY,NADAUD NICOLAS
- Current Assignee: SAINT GOBAIN,DURANDEAU ANNE,KHARCHENKO ANDRIY,NADAUD NICOLAS
- Priority: FR0852454 2008-04-11
- Main IPC: C03C17/34
- IPC: C03C17/34 ; C03C17/245 ; C03C17/36
Abstract:
The invention relates to a method for obtaining a material including a substrate and at least one thin layer that contains an at least partially crystallised titanium oxide and is deposited on a first surface of said substrate, wherein said method comprises the following steps: depositing said at least one thin layer containing titanium oxide; subjecting said at least one thin layer containing titanium oxide to a crystallisation process by supplying a power capable of heating each point of said at least one thin layer containing titanium oxide to a temperature of at least 300°C while maintaining a temperature lower than or equal to 150°C at any point of the surface of said substrate opposite said first surface, wherein said crystallisation process is preceded by the step of depositing, on and/or under said thin layer containing titanium oxide, a power-providing layer capable of absorbing the energy supplied during said crystallisation process more efficiently than said at least one thin layer containing titanium oxide, and/or capable of generating an additional power during said crystallisation process and of transmitting at least a portion of said energy to said at least one thin layer containing titanium oxide during said crystallisation process.
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