Invention Application
WO2009137313A1 THROUGH SUBSTRATE VIA INCLUDING VARIABLE SIDEWALL PROFILE 审中-公开
通过基础包括可变的平台轮廓

THROUGH SUBSTRATE VIA INCLUDING VARIABLE SIDEWALL PROFILE
Abstract:
A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture (R1-RA) within a substrate. (16) Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region (R1) at a surface of the substrate; (2) a constricted region contiguous (R2) with the first comparatively wide region; (3) a second comparatively wide region contiguous (R3) with the constricted region; and (4) a tapered region contiguous (R4) with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via.
Patent Agency Ranking
0/0