THROUGH SUBSTRATE VIA INCLUDING VARIABLE SIDEWALL PROFILE
    1.
    发明申请
    THROUGH SUBSTRATE VIA INCLUDING VARIABLE SIDEWALL PROFILE 审中-公开
    通过基础包括可变的平台轮廓

    公开(公告)号:WO2009137313A1

    公开(公告)日:2009-11-12

    申请号:PCT/US2009/042206

    申请日:2009-04-30

    CPC classification number: H01L21/76898 H01L23/481 H01L2924/0002 H01L2924/00

    Abstract: A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture (R1-RA) within a substrate. (16) Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region (R1) at a surface of the substrate; (2) a constricted region contiguous (R2) with the first comparatively wide region; (3) a second comparatively wide region contiguous (R3) with the constricted region; and (4) a tapered region contiguous (R4) with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via.

    Abstract translation: 诸如半导体结构的微电子结构和用于制造微电子结构的方法包括在衬底内的孔(R1-RA)。 (16)进入孔位于并形成通孔。 通孔可以包括通孔基板通孔。 所述孔包括,至少部分地依次连续地进行穿过所述基底:(1)在所述基底的表面处的第一相对较宽的区域(R1) (2)具有第一相对较宽区域的收缩区域连续(R2); (3)与收缩区域相邻的第二相对宽的区域(R3); 和(4)与第二较宽区域连续的(R4)的锥形区域。 孔的结构提供了填充孔的容易性以及通孔内的空隙隔离。

Patent Agency Ranking