The apparatus (1) according to the invention for the treatment of a semiconductor substrate, wherein an ion beam (4) can be produced from a doping gas and can be directed onto the semiconductor substrate (2), wherein the doping gas can be fed through a doping gas hose (6) composed of a first plastic from an adsorber-free gas container (14) to a means (3) for producing an ion beam, wherein the doping gas hose (6) is surrounded by a buffer hose (7) formed from a second plastic, is distinguished by the fact that at least one of the following measures is realized: a) the permeation coefficient of the second plastic for water is less than the permeation coefficient of the first plastic for water; b) the buffer hose (6) is surrounded by a shield hose (24) composed of a third plastic; c) a coating (25, 26) is formed on at least one of the following surfaces of the buffer hose: i) the inner surface and ii) the outer surface; and d) the doping gas hose (6) can be connected to a drying agent (28). The method according to the invention and the apparatus (1) according to the invention advantageously permit apparatuses for the treatment of semiconductor substrates such as in particle implanters to be supplied with doping gas such as, for example, phosphine and/or arsine from adsorber-free gas cylinders (14). On account of the configuration of buffer hose (7) and shield hose (24), and also the corresponding coatings (25, 26), the admission of water vapour into the buffer hose (7) and thus also into the doping gas hose (6) can be reduced in comparison with solutions known from the prior art. The risk of corrosion for the equipment supplied with the doping gas thus decreases.