An edge-centering semiconductor laser is provided, comprising a semiconductor body (1) having a wave guide area (2). The wave guide area (2) comprises a lower cover layer (3a), a lower wave guide layer (4a), an active layer (5) for generating laser radiation, an upper wave guide layer (4b) and an upper cover layer (3b). The wave guide area (2) also comprises at least one structured laser radiation scattering area (6) in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.