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    HIGH KAPPA SEMICONDUCTOR LASERS
    5.
    发明申请
    HIGH KAPPA SEMICONDUCTOR LASERS 审中-公开

    公开(公告)号：WO2022177847A1

    公开(公告)日：2022-08-25

    申请号：PCT/US2022/016284

    申请日：2022-02-14

    申请人： MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

    发明人： GREEN, Malcolm R.

    IPC分类号： H01S5/024 ,  H01S5/10 ,  H01S5/022

    摘要： A semiconductor laser may include an active region having a longitudinal axis, a rear facet end and a front facet end. The front facet end emitting an output beam of the semiconductor laser. The semiconductor laser may include a plurality of diffraction gratings positioned along the longitudinal axis of the active region. The plurality of diffraction gratings including a first diffraction grating positioned proximate the rear facet end of the active region and at least one additional diffraction grating positioned longitudinally between the first diffraction grating and the front facet. The first diffraction grating having a first kappa value and the at least one additional diffraction grating having at least a second kappa value, the first kappa value being greater than the second kappa value.

    OPTIMIZED SEMICONDUCTOR OPTICAL AMPLIFIER
    6.
    发明申请
    OPTIMIZED SEMICONDUCTOR OPTICAL AMPLIFIER 审中-公开

    公开(公告)号：WO2022174927A1

    公开(公告)日：2022-08-25

    申请号：PCT/EP2021/054270

    申请日：2021-02-22

    申请人： HUAWEI TECHNOLOGIES CO., LTD. ,  BRENOT, Romain

    发明人： GALLET, Antonin

    IPC分类号： H01S5/50 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32 ,  H01S5/343

    摘要： Described is a semiconductor optical amplifier (600, 900) comprising an active layer extending between an input (601, 901) and an output (602, 902) of the optical amplifier, the active layer having a noise suppression part (603, 903) operative to reduce noise of the optical amplifier and a second part (604, 904), the noise suppression part (603, 903) being adjacent to the input (601, 901) of the optical amplifier and having an epitaxial structure different to the second part (604, 904), the noise suppression part (603, 903) being configured to, during operation of the optical amplifier, present a gain that is blue-shifted by at least 20 nm compared to the second part (604, 904). This may allow the noise of the optical amplifier to be reduced, which may improve the performance of the device.

    전계 흡수형 변조기 집적 레이저
    7.
    发明申请
    전계 흡수형 변조기 집적 레이저 审中-公开

    公开(公告)号：WO2022085897A1

    公开(公告)日：2022-04-28

    申请号：PCT/KR2021/008862

    申请日：2021-07-12

    申请人： (주)오이솔루션

    发明人： 유준상

    IPC分类号： H01S5/0625 ,  H01S5/34 ,  H01S5/10

    摘要： 실시예에 의한 전계 흡수형 변조기 집적 레이저가 개시된다. 상기 전계 흡수형 변조기 집적 레이저는 기판; 상기 기판의 상부에 배치되고, 단일 파장의 광 신호를 출력하는 DFB; 및 상기 기판의 상부에 배치되고, 전체 영역 중 일부 영역의 두께와 폭 중 적어도 하나가 다르게 형성된 활성층을 포함하고 상기 활성층을 통해 상기 DFB로부터 출력되는 광 신호를 변조하는 EAM을 포함한다.

    UMGEBUNGSSENSOR, MESSVORRICHTUNG UND VERFAHREN ZUM BETREIBEN EINER MESSVORRICHTUNG
    8.
    发明申请
    UMGEBUNGSSENSOR, MESSVORRICHTUNG UND VERFAHREN ZUM BETREIBEN EINER MESSVORRICHTUNG 审中-公开

    公开(公告)号：WO2022053326A1

    公开(公告)日：2022-03-17

    申请号：PCT/EP2021/073633

    申请日：2021-08-26

    申请人： OSRAM OPTO SEMICONDUCTORS GMBH

    发明人： EBBECKE, Jens

    IPC分类号： H01S5/06 ,  H01S5/10 ,  H01S5/00 ,  H01S5/028 ,  G01N21/41 ,  G01N21/77

    摘要： In mindestens einer Ausführungsform umfasst der Umgebungssensor (1) zur Erfassung von zumindest einem Umgebungsparameter eine Halbleiterschichtenfolge (2), eine Ummantelung (4), deren Brechungsindex sich als Funktion des Umgebungsparameters ändert, einen ersten elektrischen Kontakt (5) sowie einen zweiten elektrischen Kontakt (6) zur Bestromung der Halbleiterschichtenfolge (2). Die Halbleiterschichtenfolge (2) weist die Form eines allgemeinen Zylinders mit einer Hauptachse (7) auf. In Richtungen senkrecht zur Hauptachse (7) ist die Halbleiterschichtenfolge (2) zumindest teilweise von der Ummantelung (4) bedeckt. Die Halbleiterschichtenfolge (2) weist einen Brechungsindex auf, der größer ist als der Brechungsindex der Ummantelung (4). Die Halbleiterschichtenfolge (2) ist dazu eingerichtet, innerhalb des Umgebungssensors (1) Lasermoden auszubilden. Ferner ist der Umgebungssensor (1) so eingerichtet, dass in dessen bestimmungsgemäßem Betrieb eine Änderung des Brechungsindexes der Ummantelung (4) eine Änderung des elektrischen Widerstands der Halbleiterschichtenfolge (2) aufgrund einer Änderung von Strahlungsverlusten innerhalb der Halbleiterschichtenfolge (2) bewirkt.

    CASCADE LASERS
    9.
    发明申请
    CASCADE LASERS 审中-公开

    公开(公告)号：WO2022038175A1

    公开(公告)日：2022-02-24

    申请号：PCT/EP2021/072908

    申请日：2021-08-18

    申请人： ETH ZÜRICH

    发明人： WANG, Ruijun ,  FAIST, Jérôme

    IPC分类号： H01S5/34 ,  H01S5/10 ,  H01S5/065 ,  H01S5/22 ,  H01S5/227

    摘要： A quantum cascade laser or interband cascade laser for outputting a frequency comb. The laser's active waveguide comprises a combination of narrow and wide sections which are engineered in combination such that the laser is operable to produce lasing only in the fundamental mode across the operating wavelength range, the narrow section squeezing light propagating in the waveguide to output a frequency comb via four-wave mixing. The narrow and wide sections are further engineered to reduce the waveguide's net GVD, and also to reduce the GVD variation across the operating range compared to a comparable waveguide that is of constant width, thus producing a more stable frequency comb. The proportion of the laser's full dynamic range (i.e. from threshold to the rollover current where the maximum output power is achieved) over which lasing remains in the frequency comb regime is thereby increased compared with a constant width single mode waveguide.

    ELECTROABSORPTION MODULATED LASER
    10.
    发明申请
    ELECTROABSORPTION MODULATED LASER 审中-公开

    公开(公告)号：WO2021209115A1

    公开(公告)日：2021-10-21

    申请号：PCT/EP2020/060407

    申请日：2020-04-14

    申请人： HUAWEI TECHNOLOGIES CO., LTD. ,  CHEN, Xin

    发明人： CHEN, Xin

    IPC分类号： H01S5/022 ,  H01S5/026 ,  H01S5/10 ,  H01S5/12

    摘要： An electroabsorption modulated laser having a first face, a second face, an optical cavity and an active region, the optical cavity being defined by a semiconductor substrate and having a length extending between the first face and the second face, and the active region being configured for injection of charge into the cavity and having effective bandgap energies at respective distances along the length of the cavity, the electroabsorption modulated laser comprising: a first modulator section extending between a first position and a second position and comprising a first part of the active region; and a second modulator section extending between the second position and a third position and comprising a second part of the active region; wherein the bandgap energy of the first part of the active region adjacent the first position is higher than the bandgap energy adjacent the second position.