A resistive sense memory ( 130, 150) and method (200) of writing data thereto. In accordance with various embodiments, the resistive sense memory comprises a first reference layer (132) with a fixed magnetic orientation in a selected direction coupled to a first tunneling barrier ( 136), a second reference layer (134) with a fixed magnetic orientation in the selected direction coupled to a second tunneling barrier (138), and a recording structure (140) disposed between the first and second tunneling barriers comprising first and second free layers (142, 144). A selected logic state is written to the resistive sense memory (206, 208) by applying a programming input (148) to impart complementary first and second programmed magnetic orientations to the respective first and second free layers.