公开(公告)号：WO2010126854A1

公开(公告)日：2010-11-04

申请号：PCT/US2010/032483

申请日：2010-04-27

Applicant: SEAGATE TECHNOLOGY LLC ,  ZHENG, Yuankai ,  XI, Haiwen ,  JUNG, Wonjoon ,  FENG, Xuebing ,  LOU, Xiaohua ,  GAO, Zheng

Inventor： ZHENG, Yuankai ,  XI, Haiwen ,  JUNG, Wonjoon ,  FENG, Xuebing ,  LOU, Xiaohua ,  GAO, Zheng

IPC: G11C11/16 ,  H01F10/32

CPC classification number: H01L43/02 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/08

Abstract: A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.

Abstract translation: 一种具有铁磁自由层和铁磁性固定参考层的磁存储单元，每个具有面外磁各向异性和面外磁化取向，并可通过自旋转矩切换。 电池包括靠近自由层的铁磁辅助层，辅助层具有小于约500Oe的低磁各向异性。 辅助层可具有面内或面外各向异性。

公开(公告)号：WO2010037090A3

公开(公告)日：2010-05-27

申请号：PCT/US2009058756

申请日：2009-09-29

Applicant: SEAGATE TECHNOLOGY LLC ,  ZHENG YUANKAI ,  DIMITROV DIMITAR

Inventor： ZHENG YUANKAI ,  DIMITROV DIMITAR

IPC: G11C11/16

CPC classification number: H01L29/82 ,  G11C11/16 ,  G11C11/161

Abstract: Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.

Abstract translation: 公开了具有镜面绝缘间隔物的磁通闭合自旋转移矩存储器。 磁通闭合自旋转移矩存储单元包括多层自由磁性元件，该多层自由磁性元件包括通过电绝缘和电子反射层反铁磁耦合到第二自由磁层的第一自由磁层。 电绝缘和非磁性隧穿阻挡层将自由磁性元件与参考磁性层分开。

公开(公告)号：WO2008020817A1

公开(公告)日：2008-02-21

申请号：PCT/SG2007/000259

申请日：2007-08-16

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH ,  ZHENG, Yuankai ,  HAN, Guchang ,  LI, Kebin ,  QIU, Jinjun ,  LUO, Ping

Inventor： ZHENG, Yuankai ,  HAN, Guchang ,  LI, Kebin ,  QIU, Jinjun ,  LUO, Ping

IPC: G11B5/147

CPC classification number: G11B5/3948 ,  G01R33/09 ,  G11B5/3906 ,  G11B5/3932

Abstract: A read head is provided, which includes a first layer structure having a pinned ferromagnetic layer, a first spacer layer and a second layer structure including a synthetic anti-ferromagnetic (SAF) multi-layer structure. The SAF multi-layer structure includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a second spacer layer arranged in between the two ferromagnetic layers. A first magnetization of the first ferromagnetic free layer and a second magnetization of the second ferromagnetic layer are perpendicular to a fixed magnetization of the pinned ferromagnetic layer.

Abstract translation: 提供读头，其包括具有钉扎铁磁层的第一层结构，第一间隔层和包括合成反铁磁（SAF）多层结构的第二层结构。 SAF多层结构包括第一铁磁自由层，第二铁磁自由层和布置在两个铁磁层之间的第二间隔层。 第一铁磁自由层的第一磁化强度和第二铁磁层的第二磁化强度垂直于被钉扎铁磁层的固定磁化强度。

公开(公告)号：WO2003077257A1

公开(公告)日：2003-09-18

申请号：PCT/SG2003/000045

申请日：2003-03-07

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH ,  ZHENG, YuanKai ,  WU, Yihong ,  GUO, Zai,Bing ,  QIU, Jin,Jun ,  LI, Ke,Bin ,  HAN, Gu,Chang

Inventor： ZHENG, YuanKai ,  WU, Yihong ,  GUO, Zai,Bing ,  QIU, Jin,Jun ,  LI, Ke,Bin ,  HAN, Gu,Chang

IPC: G11C11/02

CPC classification number: G11C11/5607 ,  G11C11/1675

Abstract: A multi-state magnetoresistive random access memory unit (MRAM) having a plurality of memory cells, each of the cells are written to and read from, independently of other cells. The plurality of memory cells comprises a recording layer as a pinned magnetic layer and a read layer as an unpinned layer. The unpinned layer has a higher Curie point than the pinned layer. The pinned layer in an individual cell is heated to near its Curie point and a bit line current and a word line current is used to align the magnetization vector of the recording layer at a plurality of angles relative to the magnetization vector of the read layer.

Abstract translation: 具有多个存储单元的多状态磁阻随机存取存储单元（MRAM），每个单元被独立于其它单元写入和读取。 多个存储单元包括作为固定磁性层的记录层和作为未固定层的读取层。 未固化层的居里点比固定层高。 单个单元中的被钉扎层被加热到其居里点附近，并且使用位线电流和字线电流来相对于读取层的磁化矢量以多个角度对准记录层的磁化矢量。

公开(公告)号：WO2010102107A1

公开(公告)日：2010-09-10

申请号：PCT/US2010/026210

申请日：2010-03-04

Applicant: SEAGATE TECHNOLOGY LLC ,  WANG, Dexin ,  XI, Haiwen ,  ZHENG, Yuankai ,  DIMITROV, Dimitar

Inventor： WANG, Dexin ,  XI, Haiwen ,  ZHENG, Yuankai ,  DIMITROV, Dimitar

IPC: G11C11/16

CPC classification number: G11C11/16 ,  G11C11/161 ,  H01L43/08

Abstract: Magnetic spin-torque memory cells, also referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation at zero field and zero current) of the associated ferromagnetic layers aligned perpendicular to the wafer plane, or "out-of-plane". A memory or magnetic junction cell may have a ferromagnetic free layer, a first pinned reference layer and a second pinned reference layer, each having a magnetic anisotropy perpendicular to the substrate. The free layer has a magnetization orientation perpendicular to the substrate that is switchable by spin torque from a first orientation to an opposite second orientation.

Abstract translation: 具有相对于晶片平面排列的相关铁磁层的磁各向异性（即零磁场和零电流的磁化方向）的磁自旋转矩存储单元也称为磁隧道结电池，或“ 平面”。 存储器或磁结电池可以具有铁磁自由层，第一固定参考层和第二固定参考层，每个具有垂直于衬底的磁各向异性。 自由层具有垂直于衬底的磁化取向，其可通过旋转扭矩从第一取向切换到相反的第二取向。

公开(公告)号：WO2010037048A1

公开(公告)日：2010-04-01

申请号：PCT/US2009/058643

申请日：2009-09-28

Applicant: SEAGATE TECHNOLOGY LLC ,  ZHENG, Yuankai ,  DIMITROV, Dimitar, V. ,  TIAN, Wei ,  WANG, Dexin ,  GAO, Zheng ,  WANG, Xiaobin

Inventor： ZHENG, Yuankai ,  DIMITROV, Dimitar, V. ,  TIAN, Wei ,  WANG, Dexin ,  GAO, Zheng ,  WANG, Xiaobin

IPC: G11C11/16

CPC classification number: G11C11/161

Abstract: Spin-transfer torque memory having a specular insulative spacer is disclosed. The spin-transfer torque memory unit (30) includes a free magnetic layer (F6), a reference magnetic layer (RL), an electrically insulating and non-magnetic tunneling barrier layer (TB) separating the free magnetic layer from the reference magnetic layer, an electrode layer (E1, E2) and an electrically insulating and electronically reflective layer (ER) separating the electrode layer and the free magnetic layer.

Abstract translation: 公开了具有镜面绝缘间隔物的自旋转移力矩存储器。 自旋转移转矩存储单元（30）包括自由磁性层（F6），参考磁性层（RL），将自由磁性层与参考磁性层分离的电绝缘和非磁性隧道势垒层（TB） ，电极层（E1，E2）和分离电极层和自由磁性层的电绝缘和电子反射层（ER）。

公开(公告)号：WO2004093087A1

公开(公告)日：2004-10-28

申请号：PCT/SG2003/000088

申请日：2003-04-16

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH ,  ZHENG, Yuankai ,  WU, Yihong

Inventor： ZHENG, Yuankai ,  WU, Yihong

IPC: G11C11/15

CPC classification number: G11C11/16

Abstract: A memory cell for a magnetic memory device comprising a first hard magnetic later having a first fixed magnetization vector; a second hard magnetic later having a second fixed magnetization vector; a first soft magnetic layer having a first alterable magnetization vector and disposed adjacent to the first hard magnetic layer and a second soft magnetic layer having a second alterable magnetization vector and disposed adjacent to the second hard magnetic layer, the first and the second soft magnetic layers are magnetostatically coupled antiparallel to each other to form a flux-closed structure. An electrically conductive layer is disposed between the two soft magnetic layers for passing an electric current therethrough to perform the read and write operations. A magnetic memory device made thereof possesses a higher thermal stability against external thermal fluctuations and in the meantime has a lower power dissipation in writing operations.

Abstract translation: 一种用于磁存储器件的存储单元，包括具有第一固定磁化矢量的第一硬磁体; 稍后具有第二固定磁化矢量的第二硬磁体; 具有第一可变磁化矢量并且邻近第一硬磁层设置的第一软磁层和具有第二可变磁化矢量并且邻近第二硬磁层设置的第二软磁层，第一软磁层和第二软磁层 相互平行地并联地形成磁通闭合结构。 在两个软磁性层之间设置导电层，用于使电流通过其中以执行读取和写入操作。 由其制成的磁存储器具具有较高的热稳定性以抵抗外部热波动，并且同时在写入操作中具有较低的功耗。

公开(公告)号：WO2010114893A1

公开(公告)日：2010-10-07

申请号：PCT/US2010/029385

申请日：2010-03-31

Applicant: SEAGATE TECHNOLOGY LLC ,  ZHENG, Yuankai ,  LOU, Xiaohua ,  GAO, Zheng ,  TIAN, Wei ,  DIMITROV, Dimitar, V. ,  WANG, Dexin

Inventor： ZHENG, Yuankai ,  LOU, Xiaohua ,  GAO, Zheng ,  TIAN, Wei ,  DIMITROV, Dimitar, V. ,  WANG, Dexin

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1673

Abstract: A resistive sense memory ( 130, 150) and method (200) of writing data thereto. In accordance with various embodiments, the resistive sense memory comprises a first reference layer (132) with a fixed magnetic orientation in a selected direction coupled to a first tunneling barrier ( 136), a second reference layer (134) with a fixed magnetic orientation in the selected direction coupled to a second tunneling barrier (138), and a recording structure (140) disposed between the first and second tunneling barriers comprising first and second free layers (142, 144). A selected logic state is written to the resistive sense memory (206, 208) by applying a programming input (148) to impart complementary first and second programmed magnetic orientations to the respective first and second free layers.

Abstract translation: 一种向其写入数据的电阻式读出存储器（130,150）和方法（200）。 根据各种实施例，电阻性感测存储器包括在耦合到第一隧道势垒（136）的选定方向上具有固定磁性取向的第一参考层（132），具有固定磁性取向的第二参考层（134） 所述选择的方向耦合到第二隧道势垒（138），以及设置在所述第一和第二隧穿屏障之间的记录结构（140），包括第一和第二自由层（142,144）。 通过施加编程输入（148）将所选择的逻辑状态写入电阻读出存储器（206,208），以将互补的第一和第二编程的磁取向赋予相应的第一和第二自由层。

公开(公告)号：WO2005043545A1

公开(公告)日：2005-05-12

申请号：PCT/SG2004/000356

申请日：2004-10-26

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH ,  ZHENG, Yuankai ,  WU, Yihong

Inventor： ZHENG, Yuankai ,  WU, Yihong

IPC: G11C11/15

CPC classification number: G11C11/16 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetic memory device includes a plurality of transistors (316, 317) formed on a substrate and a common magnetic memory block (312) including multiple effective magnetoresistive elements (318, 319), a ferromagnetic recording (321), a non-magnetic space (323), and a free magnetic reading (322) layer formed above the transistors (316, 317). An extended common digital line (315) is located above the common magnetic memory block (312). The common magnetic memory block (312) is electrically connected with a respective source/drain electrode of the transistors (316, 317) through each a contact at a respective active area. The specific magnetization state of the ferromagnetic recording layer at the active areas can be changed by a heating process and applying an external field induced from the common digital line (315) and the bit (309, 311) or word (307) or word (307) lines. The change in resistance of the effective magnetoresistive element (318, 319) can be detected by means of changing the magnetization state of the free magnetic reacting layer during reading, thus a smaller switching field is required.

Abstract translation: 磁存储器件包括形成在衬底上的多个晶体管（316,317）和包含多个有效磁阻元件（318,319），铁磁记录（321），非磁性空间 （323）和形成在晶体管（316,317）上方的自由磁读取（322）层。 扩展的公共数字线路（315）位于公共磁存储器块（312）的上方。 公共磁存储块（312）通过在相应有效区域上的每个触点与晶体管（316,317）的相应源极/漏极电连接。 可以通过加热处理来改变有源区域的铁磁记录层的特定磁化状态，并施加从公用数字线（315）和位（309,311）或字（307）或字（ 307）线。 可以通过在读取期间改变自由磁反应层的磁化状态来检测有效磁阻元件（318,319）的电阻变化，因此需要较小的开关场。

公开(公告)号：WO2005036558A1

公开(公告)日：2005-04-21

申请号：PCT/SG2004/000333

申请日：2004-10-12

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH ,  ZHENG, Yuankai ,  WU, Yihong

Inventor： ZHENG, Yuankai ,  WU, Yihong

IPC: G11C11/15

CPC classification number: G11C11/16 ,  G11C11/15

Abstract: A memory cell (310) for a magnetic memory device (300) includes a free layer (311), a cap layer, an antiferromagnetic layer, and a synthetic antiferromagnetic layer which comprises two or more than two ferromagnetic layers that are antiferromagnetically coupled through non-magnetic space layers. The synthetic antiferromagnetic layer is pinned by antiferromagnetic layer. The antiferromagnetic layer and the synthetic antiferromagnetic layer form a synthetic antiferromagnetic pinned (SAFP) recording layer. The magnetization of the SAFP recording layer can be changed by combining a heating process and an external field induced from currents flowing along the bit line (320) and the word line (330). Therefore, a MRAM with high density, high thermal stability, low power dissipation and high heat tolerance can be achieved after introducing the SAFP recording layer due to the high volume and anistropy energy of the SAFP recording layer.

Abstract translation: 用于磁存储器件（300）的存储单元（310）包括自由层（311），盖层，反铁磁层和合成反铁磁层，其包含两个或多于两个铁磁层，所述铁磁层通过非反磁铁 磁空间层。 合成反铁磁层由反铁磁层固定。 反铁磁层和合成反铁磁层形成合成反铁磁钉扎（SAFP）记录层。 可以通过组合加热过程和从沿着位线（320）和字线（330）流动的电流感应的外部场来改变SAFP记录层的磁化。 因此，由于SAFP记录层的高体积和不均匀性，在引入SAFP记录层之后，可以实现具有高密度，高热稳定性，低功耗和高耐热性的MRAM。