Invention Application
WO2011020042A3 HAFNIUM- AND ZIRCONIUM-CONTAINING PRECURSORS AND METHODS OF USING THE SAME
审中-公开
含铪和锆的前体及使用该前体的方法
- Patent Title: HAFNIUM- AND ZIRCONIUM-CONTAINING PRECURSORS AND METHODS OF USING THE SAME
- Patent Title (中): 含铪和锆的前体及使用该前体的方法
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Application No.: PCT/US2010045506Application Date: 2010-08-13
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Publication No.: WO2011020042A3Publication Date: 2011-06-09
- Inventor: DUSSARRAT CHRISTIAN , OMARJEE VINCENT M , PALLEM VENKATESWARA R
- Applicant: AIR LIQUIDE , AIR LIQUIDE AMERICAN , DUSSARRAT CHRISTIAN , OMARJEE VINCENT M , PALLEM VENKATESWARA R
- Assignee: AIR LIQUIDE,AIR LIQUIDE AMERICAN,DUSSARRAT CHRISTIAN,OMARJEE VINCENT M,PALLEM VENKATESWARA R
- Current Assignee: AIR LIQUIDE,AIR LIQUIDE AMERICAN,DUSSARRAT CHRISTIAN,OMARJEE VINCENT M,PALLEM VENKATESWARA R
- Priority: US23391209 2009-08-14
- Main IPC: C07F7/00
- IPC: C07F7/00 ; C23C16/18 ; C23C16/30
Abstract:
Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
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