Invention Application
WO2011041110A1 ELECTRONIC DEVICES AND SYSTEMS, AND METHODS FOR MAKING AND USING THE SAME
审中-公开
电子设备和系统,以及制造和使用它们的方法
- Patent Title: ELECTRONIC DEVICES AND SYSTEMS, AND METHODS FOR MAKING AND USING THE SAME
- Patent Title (中): 电子设备和系统,以及制造和使用它们的方法
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Application No.: PCT/US2010/049000Application Date: 2010-09-15
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Publication No.: WO2011041110A1Publication Date: 2011-04-07
- Inventor: THOMPSON, Scott, E. , THUMMALAPALLY, Damodar, R.
- Applicant: SUVOLTA, INC. , THOMPSON, Scott, E. , THUMMALAPALLY, Damodar, R.
- Applicant Address: 130 D Knowles Drive Los Gatos, CA 95032-1832 US
- Assignee: SUVOLTA, INC.,THOMPSON, Scott, E.,THUMMALAPALLY, Damodar, R.
- Current Assignee: SUVOLTA, INC.,THOMPSON, Scott, E.,THUMMALAPALLY, Damodar, R.
- Current Assignee Address: 130 D Knowles Drive Los Gatos, CA 95032-1832 US
- Agency: FISH, Charles, S.
- Priority: US61/247,300 20090930; US12/708,497 20100218; US61/262,122 20091117
- Main IPC: H01L21/335
- IPC: H01L21/335
Abstract:
A suite of novel structures and methods is provided to reduce power consumption in a wide array of electronic devices and systems Some structures and methods can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and nsky switch to alternative technologies Some structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced oVT compared to conventional bulk CMOS and can allow the threshold voltage VT ofFETs having dopants in the channel region to be set more precisely The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors There are many ways to configure the DDC to achieve different benefits
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