Invention Application
- Patent Title: MOSFET WITH GATE PULL-DOWN
- Patent Title (中): MOSFET与门极拉低
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Application No.: PCT/US2010/061784Application Date: 2010-12-22
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Publication No.: WO2011079194A2Publication Date: 2011-06-30
- Inventor: XU, Shuming , KOREC, Jacek , LOPEZ, Osvaldo, J.
- Applicant: TEXAS INSTRUMENTS INCORPORATED , TEXAS INSTRUMENTS JAPAN LIMITED , XU, Shuming , KOREC, Jacek , LOPEZ, Osvaldo, J.
- Applicant Address: P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474 US
- Assignee: TEXAS INSTRUMENTS INCORPORATED,TEXAS INSTRUMENTS JAPAN LIMITED,XU, Shuming,KOREC, Jacek,LOPEZ, Osvaldo, J.
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED,TEXAS INSTRUMENTS JAPAN LIMITED,XU, Shuming,KOREC, Jacek,LOPEZ, Osvaldo, J.
- Current Assignee Address: P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474 US
- Agency: FRANZ, Warren, L. et al.
- Priority: US12/964,484 20101209; US61/289,551 20091223
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/06
Abstract:
A pull-down MOSFET (110) is coupled between a drain and gate of a MOSFET main switch transistor (102) in a switching type DC-to-DC power converter. A gate of the pull-down MOSFET (110) is coupled to the drain of the main switch transistor (102) by a capacitor 118 and is connected to a source of the main switch transistor (102) by a resistor (120). The pull-down MOSFET (110) is operated by capacitive coupling to the voltage drop across the main switch transistor (102) and can be used to hold the gate of the main switch transistor (102) at or near its source potential to avoid or reduce unintentional turn-on of the main switch transistor (102) by the Miller effect.
Information query
IPC分类:
