公开(公告)号：WO2011079194A3

公开(公告)日：2011-10-20

申请号：PCT/US2010061784

申请日：2010-12-22

Applicant: TEXAS INSTRUMENTS INC ,  TEXAS INSTRUMENTS JAPAN ,  XU SHUMING ,  KOREC JACEK ,  LOPEZ OSVALDO J

Inventor： XU SHUMING ,  KOREC JACEK ,  LOPEZ OSVALDO J

IPC: H03K17/687 ,  H03K17/06

CPC classification number: H03K17/165 ,  H03K17/687

Abstract: A pull-down MOSFET (110) is coupled between a drain and gate of a MOSFET main switch transistor (102) in a switching type DC-to-DC power converter. A gate of the pull-down MOSFET (110) is coupled to the drain of the main switch transistor (102) by a capacitor 118 and is connected to a source of the main switch transistor (102) by a resistor (120). The pull-down MOSFET (110) is operated by capacitive coupling to the voltage drop across the main switch transistor (102) and can be used to hold the gate of the main switch transistor (102) at or near its source potential to avoid or reduce unintentional turn-on of the main switch transistor (102) by the Miller effect.

Abstract translation: 下拉MOSFET（110）耦合在开关型DC-DC功率转换器中的MOSFET主开关晶体管（102）的漏极和栅极之间。 下拉MOSFET（110）的栅极通过电容器118耦合到主开关晶体管（102）的漏极，并且通过电阻器（120）连接到主开关晶体管（102）的源极。 下拉MOSFET（110）通过对主开关晶体管（102）两端的电压降进行电容耦合来操作，并且可以用来将主开关晶体管（102）的栅极保持在其源极电位或其附近，以避免 通过米勒效应减少主开关晶体管（102）的无意导通。

公开(公告)号：WO1994016502A1

公开(公告)日：1994-07-21

申请号：PCT/US1994000389

申请日：1994-01-12

Applicant: BAYRUNS, Robert, J. ,  SWEENEY, Scott, D. ,  LOPEZ, Osvaldo, J.

IPC: H04B01/10

CPC classification number: H03K17/162 ,  G01S7/021 ,  H03B5/1203 ,  H03B5/1228 ,  H03B5/1243 ,  H03B2202/084 ,  H03B2202/088 ,  H03D7/00 ,  H03D2200/009

Abstract: Technique for reducing local oscillator leakage in integrated frequency conversion circuits. The technique includes the step of coupling an external portion (35) of a resonator circuit (31, 35) to the integrated frequency conversion circuit (200). The coupling is accomplished without using any of the DC power or ground pins of the conversion circuit. A frequency conversion circuit based on this technique includes resonator, oscillator, and mixer circuits. Part of the oscillator and mixer circuit (16, 13) is encapsulated in a package (200), whereas at least a portion of the resonator circuit (35) is located outside the package. The outside portion of the resonator circuit (35) connects to at least two external resonator pins (43a, 43b) of the package (200) such that, during the operating of the conversion circuit, the net current entering the package via said external resonator pins (43a, 43b) is approximately zero.

Abstract translation: 降低集成频率转换电路中本地振荡器泄漏的技术。 该技术包括将谐振器电路（31,35）的外部部分（35）耦合到集成频率转换电路（200）的步骤。 在不使用转换电路的任何直流电源或接地引脚的情况下实现耦合。 基于该技术的变频电路包括谐振器，振荡器和混频器电路。 振荡器和混频器电路（16,13）的一部分被封装在封装（200）中，而谐振器电路（35）的至少一部分位于封装外部。 谐振器电路（35）的外部部分连接到封装（200）的至少两个外部谐振器引脚（43a，43b），使得在转换电路的操作期间，经由所述外部谐振器进入封装的净电流 引脚（43a，43b）大约为零。

公开(公告)号：WO2013106050A2

公开(公告)日：2013-07-18

申请号：PCT/US2012/032788

申请日：2012-04-09

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED ,  HERBSOMMER, Juan, A. ,  LOPEZ, Osvaldo, J. ,  NOQUIL, Jonathan, A.

Inventor： HERBSOMMER, Juan, A. ,  LOPEZ, Osvaldo, J. ,  NOQUIL, Jonathan, A.

IPC: H01L23/495 ,  H01L23/492

CPC classification number: H01L21/4825 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/19 ,  H01L24/20 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32104 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/00

Abstract: A packaged power transistor device (100) having a leadframe including a flat plate (110) and a coplanar flat strip (120) spaced from the plate, the plate having a first thickness (110a) and the strip having a second thickness (120a) smaller than the first thickness, the plate and the strip having terminals (212; 121a). A field-effect power transistor chip (210) having a third thickness (210a), a first and a second contact pad on one chip side, and a third contact pad (211) on the opposite chip side, the first pad being attached to the plate, the second pad being attached to the strip, and the third pad being coplanar with the terminals. Encapsulation compound (130) filling the thickness difference between plate and strip, and spaces between chip and terminals, wherein the compound has a surface (101) coplanar with the plate surface (111) and the opposite surface (102) coplanar with the third pad (211) and the terminals (212; 212a), the distance (104) between the surfaces being equal to the sum of the first (110a) and third (210a) thicknesses.

Abstract translation: 一种封装的功率晶体管器件（100），其具有包括平板（110）和与所述板间隔开的共面平坦条（120）的引线框架，所述板具有第一厚度（110a），并且所述带具有第二厚度（120a） 小于第一厚度，板和带具有端子（212; 121a）。 具有第三厚度（210a），一个芯片侧的第一和第二接触焊盘和相对的芯片侧的第三接触焊盘（211）的场效应晶体管芯片（210），所述第一焊盘附接到 所述板，所述第二垫附接到所述条，并且所述第三垫与所述端子共面。 填充板和条带之间的厚度差以及芯片和端子之间的空间的封装化合物（130），其中所述化合物具有与所述板表面（111）共面的表面（101）和与所述第三焊盘共面的相对表面（102） （211）和端子（212; 212a）之间，表面之间的距离（104）等于第一（110a）和第三（210a）厚度之和。

公开(公告)号：WO2012109265A3

公开(公告)日：2012-11-01

申请号：PCT/US2012024171

申请日：2012-02-07

Applicant: TEXAS INSTRUMENTS INC ,  TEXAS INSTRUMENTS JAPAN ,  HERBSOMMER JUAN A ,  LOPEZ OSVALDO J ,  NOQUIL JONATHAN A

Inventor： HERBSOMMER JUAN A ,  LOPEZ OSVALDO J ,  NOQUIL JONATHAN A

IPC: H01L25/18 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73221 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A high frequency power supply module (800) of a synchronous Buck converter having the control die (810) directly soldered drain-down to the pad (801) of a leadframe; pad (801) is connected to VIN and the VIN connection to control die (810) exhibits vanishing impedance and inductance, thus reducing the amplitude and duration of switch node voltage ringing by more than 90 %. Consequently, the input current enters the control die terminal vertically from the pad. The switch node clip (840), topping the control die (810), is designed with an area large enough to place the sync die (820) drain-down on top of the control die; the current continues to flow vertically through the converter stack. The active area of the sync die is equal to or greater than the active area of the control die; the physical area of the sync die is equal to or greater than the physical area of the control die. The source terminal of sync die (820) is connected to ground by clip (860) designed to act as a heat spreader.

Abstract translation: 具有控制管芯（810）的同步降压转换器的高频电源模块（800）直接焊接到引线框架的焊盘（801）上; 焊盘801连接到VIN，并且VIN连接到控制管芯810展现出消失的阻抗和电感，因此将开关节点电压振铃的幅度和持续时间减少了90％以上。 因此，输入电流从焊盘垂直进入控制芯片端子。 顶置控制管芯（810）的开关节点夹（840）被设计为具有足够大的面积以将同步管芯（820）放置在控制管芯的顶部上; 电流继续垂直流过转换器堆栈。 同步芯片的有效面积等于或大于控制芯片的有效面积; 同步芯片的物理面积等于或大于控制芯片的物理面积。 同步管芯（820）的源极端子通过设计用作散热器的夹子（860）接地。

公开(公告)号：WO2012109265A2

公开(公告)日：2012-08-16

申请号：PCT/US2012/024171

申请日：2012-02-07

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED ,  HERBSOMMER, Juan, A. ,  LOPEZ, Osvaldo, J. ,  NOQUIL, Jonathan, A.

Inventor： HERBSOMMER, Juan, A. ,  LOPEZ, Osvaldo, J. ,  NOQUIL, Jonathan, A.

IPC: H01L25/18 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73221 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A high frequency power supply module (800) of a synchronous Buck converter having the control die (810) directly soldered drain-down to the pad (801) of a leadframe; pad (801) is connected to V IN and the V IN connection to control die (810) exhibits vanishing impedance and inductance, thus reducing the amplitude and duration of switch node voltage ringing by more than 90 %. Consequently, the input current enters the control die terminal vertically from the pad. The switch node clip (840), topping the control die (810), is designed with an area large enough to place the sync die (820) drain-down on top of the control die; the current continues to flow vertically through the converter stack. The active area of the sync die is equal to or greater than the active area of the control die; the physical area of the sync die is equal to or greater than the physical area of the control die. The source terminal of sync die (820) is connected to ground by clip (860) designed to act as a heat spreader.

Abstract translation: 具有控制管芯（810）的同步降压转换器的高频电源模块（800）直接焊接到引线框的焊盘（801）; 焊盘（801）连接到VIN，与控制管芯（810）的VIN连接呈现消失的阻抗和电感，从而将开关节点电压振铃的幅度和持续时间降低了90％以上。 因此，输入电流从焊盘垂直地进入控制管芯端子。 将控制管芯（810）顶起的开关节点夹（840）被设计成具有足够大的面积以将同步管芯（820）排放到控制管芯的顶部上; 电流继续通过转换器堆栈垂直流动。 同步管芯的有效面积等于或大于控制管芯的有效面积; 同步管芯的物理面积等于或大于控制管芯的物理面积。 同步模具（820）的源极端子通过设计成用作散热器的夹子（860）连接到地面。

公开(公告)号：WO2013106050A3

公开(公告)日：2013-10-03

申请号：PCT/US2012032788

申请日：2012-04-09

Applicant: TEXAS INSTRUMENTS INC ,  TEXAS INSTRUMENTS JAPAN ,  HERBSOMMER JUAN A ,  LOPEZ OSVALDO J ,  NOQUIL JONATHAN A

Inventor： HERBSOMMER JUAN A ,  LOPEZ OSVALDO J ,  NOQUIL JONATHAN A

IPC: H01L23/495 ,  H01L23/492

CPC classification number: H01L21/4825 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/19 ,  H01L24/20 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32104 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/00

Abstract: A packaged power transistor device (100) having a leadframe including a flat plate (110) and a coplanar flat strip (120) spaced from the plate, the plate having a first thickness (110a) and the strip having a second thickness (120a) smaller than the first thickness, the plate and the strip having terminals (212; 121a). A field-effect power transistor chip (210) having a third thickness (210a), a first and a second contact pad on one chip side, and a third contact pad (211) on the opposite chip side, the first pad being attached to the plate, the second pad being attached to the strip, and the third pad being coplanar with the terminals. Encapsulation compound (130) filling the thickness difference between plate and strip, and spaces between chip and terminals, wherein the compound has a surface (101) coplanar with the plate surface (111) and the opposite surface (102) coplanar with the third pad (211) and the terminals (212; 212a), the distance (104) between the surfaces being equal to the sum of the first (110a) and third (210a) thicknesses.

Abstract translation: 一种具有引线框架的封装功率晶体管器件（100），所述引线框架包括平板（110）和与所述板隔开的共面平带（120），所述平板具有第一厚度（110a）并且所述带具有第二厚度（120a） 小于第一厚度，板和带具有端子（212; 121a）。 一种场效应功率晶体管芯片（210），具有第三厚度（210a），在一个芯片侧上的第一和第二接触焊盘以及在相反芯片侧上的第三接触焊盘（211），第一焊盘附着到 所述板，所述第二衬垫附接到所述条带，并且所述第三衬垫与所述端子共面。 封装化合物（130）填充板和条之间的厚度差以及芯片和端子之间的空间，其中该化合物具有与板表面（111）共面的表面（101）和与第三焊盘共面的相对表面（102） （211）和端子（212; 212a）之间，表面之间的距离（104）等于第一（110a）和第三（210a）厚度的总和。

公开(公告)号：WO2011079194A2

公开(公告)日：2011-06-30

申请号：PCT/US2010/061784

申请日：2010-12-22

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED ,  XU, Shuming ,  KOREC, Jacek ,  LOPEZ, Osvaldo, J.

Inventor： XU, Shuming ,  KOREC, Jacek ,  LOPEZ, Osvaldo, J.

IPC: H03K17/687 ,  H03K17/06

CPC classification number: H03K17/165 ,  H03K17/687

Abstract: A pull-down MOSFET (110) is coupled between a drain and gate of a MOSFET main switch transistor (102) in a switching type DC-to-DC power converter. A gate of the pull-down MOSFET (110) is coupled to the drain of the main switch transistor (102) by a capacitor 118 and is connected to a source of the main switch transistor (102) by a resistor (120). The pull-down MOSFET (110) is operated by capacitive coupling to the voltage drop across the main switch transistor (102) and can be used to hold the gate of the main switch transistor (102) at or near its source potential to avoid or reduce unintentional turn-on of the main switch transistor (102) by the Miller effect.

Abstract translation: 下拉MOSFET（110）耦合在开关型DC-DC电力转换器中的MOSFET主开关晶体管（102）的漏极和栅极之间。 下拉MOSFET（110）的栅极通过电容器118耦合到主开关晶体管（102）的漏极，并通过电阻器（120）连接到主开关晶体管（102）的源极。 下拉MOSFET（110）通过与主开关晶体管（102）上的电压降的电容耦合来操作，并且可以用于将主开关晶体管（102）的栅极保持在其源极电位处或其附近，以避免或 减少主开关晶体管（102）的无意的接通由米勒效应。