The invention relates to a method for creating a two-stage doping in a semiconductor substrate (80), wherein in a doping area (89) to be provided with the two-stage doping (90, 92), dopant is diffused into the semiconductor substrate (80) by means of heavy diffusion (10) and in this way a high surface concentration of dopant is created, and after the heavy diffusion (10) the semiconductor substrate (80) is locally heated (12) in areas (91) of the two-stage doping (90, 92) to be doped more heavily and an oxide layer (88) is created (16) on the doping area (89).