Invention Application
WO2011093996A3 CMOS POWER AMPLIFIERS HAVING INTEGRATED ONE-TIME PROGRAMMABLE (OTP) MEMORIES
审中-公开
CMOS功率放大器具有集成的一次性可编程(OTP)存储器
- Patent Title: CMOS POWER AMPLIFIERS HAVING INTEGRATED ONE-TIME PROGRAMMABLE (OTP) MEMORIES
- Patent Title (中): CMOS功率放大器具有集成的一次性可编程(OTP)存储器
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Application No.: PCT/US2011/000135Application Date: 2011-01-25
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Publication No.: WO2011093996A3Publication Date: 2011-08-04
- Inventor: DUPUIS, Timothy, J. , MISRA, Abhay
- Applicant: JAVELIN SEMICONDUCTOR, INC. , DUPUIS, Timothy, J. , MISRA, Abhay
- Applicant Address: 3801 S. Capital of Texas Highway Suite 150 Austin, TX 78704 US
- Assignee: JAVELIN SEMICONDUCTOR, INC.,DUPUIS, Timothy, J.,MISRA, Abhay
- Current Assignee: JAVELIN SEMICONDUCTOR, INC.,DUPUIS, Timothy, J.,MISRA, Abhay
- Current Assignee Address: 3801 S. Capital of Texas Highway Suite 150 Austin, TX 78704 US
- Agency: PETERMAN, Brian, W.
- Priority: US12/657,996 20100201
- Main IPC: H03F1/22
- IPC: H03F1/22 ; H03F3/20
Abstract:
CMOS power amplifiers (PAs) are disclosed having one or more integrated one-time programming (OTP) memories that are utilized to control at least in part operation of the CMOS PAs. The integrated OTP memories within the CMOS power amplifiers (PAs) allow adjustments, such as one-time factory trimming, of CMOS PA integrated circuits to optimize or improve performance. With this capability, for example, the tuning and biasing of stages within a multi-stage amplifier within a CMOS PA can be measured during factory test and adjusted by setting one or more bits in the OTP memories, as desired. Further, the operation of other circuitry within the PA can also be controlled at least in part with parameter settings stored in the OTP memories.
Information query
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